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A method and device for adaptive power amplification and wideband power amplifier

A power amplification and self-adaptive technology, applied in power amplifiers, high-frequency amplifiers, advanced technologies, etc., can solve the problems of limited device performance, low output power and output efficiency of broadband power amplifiers, etc.

Active Publication Date: 2021-04-30
36TH RES INST OF CETC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, in the ever-higher requirements, even though the third-generation GaN power tube has inherent advantages in broadband applications, the performance of the device is always limited.
Generally, the input RF signal is only a few segments in the working frequency band of the broadband power amplifier. However, the traditional broadband power amplifier does not have a relatively narrow-band signal channel, and the RF signal can only be amplified through the broadband signal channel, resulting in the output of the broadband power amplifier. Less power and output efficiency

Method used

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  • A method and device for adaptive power amplification and wideband power amplifier
  • A method and device for adaptive power amplification and wideband power amplifier
  • A method and device for adaptive power amplification and wideband power amplifier

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Embodiment Construction

[0022] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0023] When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with aspects of the present application as recited in the appended claims.

[0024] The terminology used in this application is for the purpose of describing particular embodiments only, and is not intended to limit the application. As used in this application and the appended claims, the singular forms "a", "the", and "the" are intended to include t...

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Abstract

The invention discloses an adaptive power amplifying method, device and broadband power amplifier. The method includes: performing pre-stage power amplification on an input radio frequency signal; A preset narrow-band signal channel corresponding to the frequency range included in the signal, and output a frequency-divided signal; perform power amplification on each of the frequency-divided signals; perform frequency combination on all the frequency-divided signals that have undergone power amplification, and output a frequency-combined signal . The method can be applied to broadband power amplifiers of any frequency band and power level, and has a wide range of applications; the output power, output efficiency, gain and other performance indicators of the broadband power amplifier designed by this method are improved.

Description

technical field [0001] The invention relates to the field of power amplification, in particular to a method and device for adaptive power amplification and a broadband power amplifier. Background technique [0002] Broadband power amplifiers are mainly used in communication electronic countermeasures, broadband receiving and microwave test systems. At present, more and more electronic systems adopt broadband solutions, and the requirements for indicators are getting higher and higher, and its performance plays a vital role in systems such as communication electronic countermeasures. However, the main performance of broadband power amplifiers depends on the performance of power devices. After long-term development of power devices, the performance indicators have been greatly improved. The experienced products include silicon-based transistors, gallium arsenide field effect transistors and LDMOS transistors, GaN power tube etc. [0003] In 2006, the article "Proceedings of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/20H03F3/189H04B7/155
CPCY02D30/70
Inventor 董佳兴
Owner 36TH RES INST OF CETC
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