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Flexible composite thermoelectric thin film and preparation method therefor

A thermoelectric thin film, flexible technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device node lead-out materials, nanotechnology, etc., can solve the problem of low power factor of composite materials, achieve low cost, simple raw materials, and preparation process simple effect

Inactive Publication Date: 2018-01-05
JIANGXI SCI & TECH NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the Te-PEDOT:PSS composite material prepared by direct compounding method exhibits high electrical conductivity, the sharply reduced Seebeck coefficient leads to a low power factor of the prepared composite material.

Method used

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  • Flexible composite thermoelectric thin film and preparation method therefor
  • Flexible composite thermoelectric thin film and preparation method therefor
  • Flexible composite thermoelectric thin film and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The flexible composite thermoelectric film is made of PEDOT:PSS, tellurium nanowires, and glucose; the mass ratio of tellurium nanowires to glucose is 1.68:1; the mass ratio of tellurium nanowires to PEDOT:PSS is 9:1.

[0039] The preparation method of the flexible composite thermoelectric film includes:

[0040] Step 1: Preparation of Te nanowires

[0041] Weigh 0.1884g Na 2 TeO 3 , Dissolve 1.000g of PVP in 50mL of deionized water and dissolve completely under magnetic stirring. Use a pipette to measure 3.3mL of hydrazine hydrate and 6.7mL of ammonia water (25-28%), and stir for 20min to promote their complete dissolution. Add the above solution into the inner tank of the reaction kettle, and add deionized water to make the solution reach 80% of the total capacity of the inner tank (the total volume of the polytetrafluoroethylene container is 100 mL). The reaction kettle was placed in an oven at 180° C. for 3.5 h, cooled to room temperature in a water bath, and an ...

Embodiment 2

[0049] The flexible composite thermoelectric film is made of PEDOT:PSS, tellurium nanowires, and glucose; the mass ratio of tellurium nanowires to glucose is 1.68:1; the mass ratio of tellurium nanowires to PEDOT:PSS is 4:1.

[0050] The preparation method is the same as in Example 1.

[0051] Figure 4-5 As shown, the electrical conductivity of the prepared flexible composite thermoelectric film is 35.65S / cm, and the Seebeck coefficient is 163.65μV / K.

Embodiment 3

[0053] The flexible composite thermoelectric film is made of PEDOT:PSS, tellurium nanowires, and glucose; the mass ratio of tellurium nanowires to glucose is 1.68:1; the mass ratio of tellurium nanowires to PEDOT:PSS is 7:3.

[0054] The preparation method is the same as in Example 1.

[0055] Figure 4-5 As shown, the electrical conductivity of the prepared flexible composite thermoelectric film is 38.7S / cm, and the Seebeck coefficient is 134.9μV / K.

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Abstract

The invention discloses a flexible composite thermoelectric thin film and a preparation method therefor, and belongs to the field of a composite thermoelectric material. The flexible composite thermoelectric thin film is prepared from PEDOT: PSS, tellurium nanowires and glucose; the mass ratio of the tellurium nanowires to glucose is 1-5 to 1; and the mass ratio of the tellurium nanowires to PEDOT: PSS is 0.5-9 to 1. The prepared composite material has high Seebeck coefficient as well as high electrical conductivity after acid treatment, wherein the tellurium nanowires are coated with PEDOT: PSS in the composite material.

Description

technical field [0001] The invention relates to the field of composite thermoelectric materials, in particular to a flexible composite thermoelectric film and a preparation method thereof. Background technique [0002] Thermoelectric materials, also known as thermoelectric materials, are clean energy materials that use the internal carrier movement of semiconductor materials to realize direct mutual conversion of thermal energy and electrical energy. Due to the characteristics of small size, light weight, no moving parts, no noise, no working fluid leakage, low maintenance cost and long service life, thermoelectric devices have shown broad application in many fields such as aerospace, industry, military, communication, and medical treatment. Application prospects. [0003] The performance of thermoelectric materials is mainly determined by the dimensionless thermoelectric figure of merit (ZT value). The larger the ZT value, the higher the thermoelectric conversion efficienc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/24H01L35/16H01L35/34B82Y30/00B82Y40/00H10N10/856H10N10/01H10N10/852
Inventor 蒋丰兴李长存徐景坤孙彭亮刘聪聪王同洲
Owner JIANGXI SCI & TECH NORMAL UNIV
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