Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for tuning forbidden band width of Ga2O3 through Nb doping

A bandgap, ga2o3 technology, applied in the field of semiconductor materials, to achieve the effect of large bandgap tuning range

Inactive Publication Date: 2017-12-26
BEIJING UNIV OF TECH
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing technologies can only operate above or below the intrinsic Ga 2 o 3 Bandgap Tuning in the Bandgap Width Direction of the Thin Film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for tuning forbidden band width of Ga2O3 through Nb doping
  • Method for tuning forbidden band width of Ga2O3 through Nb doping
  • Method for tuning forbidden band width of Ga2O3 through Nb doping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) A polished n-type silicon wafer is used as a substrate (with a resistivity of 2-4Ωcm and a thickness of 0.3mm). The substrates were ultrasonically cleaned with toluene, acetone, ethanol and deionized water for 15 min, and then dried in a glove box for 1 hour.

[0022] (2) Using radio frequency magnetron sputtering equipment to deposit Nb: Ga in layered growth 2 o 3 thin film materials, by controlling the Nb 2 o 5 and Ga 2 o 3 The sputtering time of the target controls the Nb doping dose. The pre-vacuum degree of the system is 1×10 -3 Below Pa. The film growth atmosphere is Ar, and the working pressure is 0.5Pa. Ga 2 o 3 and Nb 2 o 5 The sputtering power of the target is 80W, and the sputtering time is 300s, 10s alternately and 300s, 40s alternately, so as to obtain Nb:Ga with different Nb doping content 2 o 3 Thin film, wherein the thickness of the film is 250-260nm.

[0023] (3) The prepared Nb:Ga 2 o 3 The film samples were placed in a tube furnac...

Embodiment 2

[0026] (1) A polished n-type silicon wafer is used as a substrate (with a resistivity of 2-4Ωcm and a thickness of 0.3mm). The substrates were ultrasonically cleaned with toluene, acetone, ethanol and deionized water for 15 min, and then dried in a glove box for 1 hour.

[0027] (2) Deposit Nb:Ga by co-sputtering using radio frequency magnetron sputtering equipment 2 o 3 film material. The pre-vacuum degree of the system is 1×10 -3 Below Pa. The film growth atmosphere is Ar, and the working pressure is 0.6Pa. Ga 2 o 3 and Nb 2 o 5 The sputtering power of the target is 80W, the sputtering time is 50min, and four Nb:Ga 2 o 3 Film samples.

[0028] (3) The prepared 3 Nb:Ga2 o 3 Thin film samples were placed in a tube furnace for Ar, O 2 and N 2 Atmosphere annealing. Use a mechanical pump to evacuate the air pressure in the tube furnace to below 1Pa, and introduce high-purity Ar (99.999%), O 2 (99.999%) or N 2 (99.999%). After that, the working pressure was mainta...

Embodiment 3

[0031] (1) A polished n-type silicon wafer is used as a substrate (with a resistivity of 2-4Ωcm and a thickness of 0.3mm). The substrates were ultrasonically cleaned with toluene, acetone, ethanol and deionized water for 15 min, and then dried in a glove box for 1 hour.

[0032] (2) Deposit Nb:Ga by co-sputtering using radio frequency magnetron sputtering equipment 2 o 3 film material. The pre-vacuum degree of the system is 1×10 -3 Below Pa. The film growth atmosphere is Ar, and the working pressure is 0.6Pa. Ga 2 o 3 and Nb 2 o 5 The sputtering power of the target is 80W. By controlling the co-sputtering coating time, multiple Nb:Ga with the same Nb doping content (doping mass percentage content is 1.5%) but different film thicknesses are obtained. 2 o 3 Film samples. Set the coating time to 20min, 30min, 40min, 60min respectively, and obtain four Nb:Ga films with thicknesses of 100nm, 150nm, 200nm and 300nm respectively. 2 o 3 Film samples.

[0033] (3) The pre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Resistivityaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for tuning the forbidden band width of Ga2O3 through Nb doping and belongs to the field of semiconductor materials. Radio frequency magnetron sputtering equipment is used for depositing a layer of Nb:Ga2O3 thin film material on a monocrystal polished silicon wafer (Si); an impurity activation technique adopting slow annealing in a tubular furnace is used for enabling Nb distribution in the Nb:Ga2O3 thin film material to be uniformized; Nb ions are transferred to vacancy defect positions in crystal lattices, and the gap positions occupy the replacement positions; and the structural defects are reduced, the crystallization degree is improved, the crystal grain size is increased, and the quality of the thin film is further improved. Compared with the prior art, the method for tuning the forbidden band width of Ga2O3 through Nb doping is characterized in that Nb is selected as a dopant, so that the forbidden band width of Ga2O3 has wider forbidden band width tuning range.

Description

technical field [0001] The present invention relates to three kinds of tuned Ga by Nb doping 2 o 3 The invention relates to a method for band gap width, which belongs to the field of semiconductor materials. Background technique [0002] Ga 2 o 3 It is a wide bandgap semiconductor material with a bandgap width E g =4.9eV, which is the transparent conductive material with the widest band gap known so far. Ga 2 o 3 The larger band gap makes it have the characteristics of high breakdown voltage, high saturation electron drift rate, large thermal conductivity and stable chemical properties, so Ga 2 o 3 A new generation of optoelectronic devices operating in a shorter wavelength range has broad application prospects, such as deep ultraviolet detectors, short-wavelength light-emitting devices, transparent electronic devices, etc. [0003] Ga 2 o 3 The forbidden band width of the film determines the working light wavelength corresponding to its optoelectronic device. A ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/16C23C14/18C23C14/08
CPCC23C14/08C23C14/165C23C14/185C23C14/352
Inventor 邓金祥张浩潘志伟白志英
Owner BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com