Method for improving cut-off wavelength of indium arsenide/gallium antimony superlattice infrared detector material, indium arsenide/gallium antimony type II superlattice and application thereof

Abstract

The invention aims to provide a method for improving a cut-off wavelength of an indium arsenide / gallium antimony superlattice infrared detector material, an indium arsenide / gallium antimony type II superlattice material and an application thereof aiming at the defects that the growth difficulty of the material is increased, the growth cost of the material is high, and the service life of production equipment is short due to excessive intracrystalline interfaces of indium arsenide / gallium antimony type II superlattices in the prior art. According to the method for improving the cut-off wavelength of the indium arsenide / gallium antimony superlattice infrared detector material, the cut-off wavelength of the indium arsenide / gallium antimony type II superlattice infrared detector material can be increased by increasing the stress of an InSb layer in an indium arsenide / gallium antimony type II superlattice unit cell and changing the energy band structure of the superlattice material. By adopting the method provided by the invention, the cut-off wavelength of the superlattice infrared detector material can be increased by changing the energy band structure, obtained devices prepared from the indium arsenide / gallium antimony type II superlattice material has higher detectivity, the number of material interfaces can be reduced, the levels can be reduced, and the detection wavelength and detectivity of the indium arsenide / gallium antimony type II superlattice material can be further increased.

Description

technical field [0001] The invention relates to the technical field of indium arsenic / gallium antimony type II superlattice and infrared detector materials, in particular to indium arsenic / gallium antimony type II superlattice materials and improving the cutoff wavelength of indium arsenic / gallium antimony superlattice infrared detector materials method. The present invention improves the lattice layer structure of the second type of superlattice composed of InAs / GaSb and provides a method for increasing the cut-off wavelength of the second type of superlattice material and discloses the indium arsenic of the structure of the present invention / Gallium antimony II superlattice material application. Background technique [0002] Compared with other infrared detectors, InAs / GaSb II superlattice infrared detectors have precise and controllable response bands, wide response bands, high operating temperature, long carrier lifetime, high quantum efficiency, low dark current and ...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for improving the difficulty of material growth, high material growth cost, and low service life of production equipment due to the many intracrystalline interfaces of indium arsenide / gallium antimony II superlattice in the prior art. Indium Arsenic / Gallium Antimony Superlattice Infrared Detector Material Cutoff Wavelength Method and Indium Arsenic / Gallium Antimony Type II Superlattice Material and Its Application

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