Halogen-free electronic material with high dielectric performance and preparation method of material

Abstract

The invention provides a halogen-free electronic material with high dielectric performance and a preparation method of the material. A fullerene derivative is added to a chlorobenzene cyanate solution, maleic anhydride is added, the mixture is subjected to a reflux reaction for 40 min, then bi-carboxylphthalimide is added, the mixture reacts for 1 h and then is subjected to rotary evaporation and drying until a solvent is removed, and a cyanate prepolymer is obtained; the cyanate prepolymer is mixed with diphenylphosphine oxide, naphthol-phenolic resin and tetraglycidyl diamino-dimethylene benzene, the mixture is stirred for 1 h at the temperature of 110 DEG C, titanium dioxide whiskers and silyl enol ether are added, the mixture is continuously stirred for 50 min and naturally cooled, and a cyanate modifier is obtained; then the cyanate modifier is crushed and added to an extruder with polyphenylene sulfide and hollow aluminum oxide, extrusion is performed at the temperature of 155 DEG C, and halogen-free particles with high dielectric performance are obtained; the halogen-free particles with high dielectric performance are subjected to hot pressing, and the halogen-free electronic material with high dielectric performance is obtained. The prepared product has excellent dielectric performance and has a good flame-retardant effect and good thermal performance.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to a halogen-free high-dielectric performance electronic material and a preparation method thereof. Background technique [0002] Electronic materials have an extremely wide range of applications, which require good dielectric and insulating properties. At the same time, heat resistance and flame retardancy are also critical, especially the dielectric properties are directly related to the application level of the material. However, if the prior art does not use a halogen flame retardant, a good flame retardant effect cannot be achieved, and at the same time, the phosphorus flame retardant will reduce the dielectric properties of the material. Contents of the invention [0003] The invention provides a halogen-free electronic material with high dielectric performance and a preparation method thereof. [0004] In order to achieve the above-mentioned purpos...

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Problems solved by technology

However, if the existing technology does not use halogen flame retardants, it will not achieve a good flame retardant effect, and phosphorus flame retardants will reduce the dielectric properties of the material.

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