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High-stability resistive random access memory based on graphene oxide

A resistive memory, high-stability technology, applied in nanotechnology for information processing, nanotechnology for materials and surface science, electrical components, etc., to reduce electrical power consumption, improve work stability, and optimize performance Effect

Active Publication Date: 2017-10-17
NORTHEAST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, considering the sp formed by graphene oxide-based RRAM 2 The particularity of the conductive channel, the traditional doping method is difficult to solve the randomness of the conductive channel

Method used

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  • High-stability resistive random access memory based on graphene oxide
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  • High-stability resistive random access memory based on graphene oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Example 1 A highly stable resistive memory based on graphene oxide

[0027] See figure 1 , 2 , 3, 4, a high-stability resistive variable memory based on graphene oxide, the specific manufacturing process is as follows:

[0028] Step 100: if figure 2 As shown, the conductive glass 200 substrate was ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes in sequence, dried with nitrogen, and then the surface of the ITO conductive glass 200 was treated with oxygen plasma.

[0029] Step 101: Doping 1 mg of anatase phase TiO2 nanoparticles 203 with a particle size of 10 nm into 10 ml of graphene oxide in ethanol solution, TiO in the solution 2 The mass ratio of nanoparticles 203 to graphene oxide is 1:10, and the mixed solution is placed on a magnetic stirrer and fully stirred for 10 hours;

[0030] Step 102: Spin-coat the graphene oxide mixed solution in step 101 onto the ITO conductive glass 200 at a low speed of 500r / min for 20s and a high sp...

Embodiment 2

[0033] Example 2 A highly stable resistive memory based on graphene oxide

[0034] See figure 1 , 2 , 3, 4, a high-stability resistive variable memory based on graphene oxide, the specific manufacturing process is as follows:

[0035] Step 100: if figure 2 As shown, the conductive glass 200 substrate was ultrasonically cleaned with acetone, ethanol, and deionized water for 15 minutes in sequence, dried with nitrogen, and then the surface of the FTO conductive glass 200 was treated with oxygen plasma.

[0036]Step 101: 0.5 mg of anatase phase TiO with a particle size of 20 nm 2 Nanoparticles 203 are doped into the ethanol solution of 10ml graphene oxide, and TiO in the solution 2 The mass ratio of nanoparticles 203 to graphene oxide is 1:30, and the mixed solution is placed on a magnetic stirrer and fully stirred for 8 hours;

[0037] Step 102: Spin-coat the graphene oxide mixed solution in step 101 onto the FTO conductive glass 200, spin-coat at a low speed of 500r / min f...

Embodiment 3

[0040] Example 3 A highly stable resistive memory based on graphene oxide

[0041] See figure 1 , 2 , 3, 4, a high-stability resistive variable memory based on graphene oxide, the specific manufacturing process is as follows:

[0042] Step 100: if figure 2 As shown, the conductive glass 200 substrate was ultrasonically cleaned with acetone, ethanol, and deionized water for 8 minutes in sequence, dried with nitrogen, and then the surface of the ITO conductive glass 200 was treated with oxygen plasma.

[0043] Step 101: Doping 1mg of anatase phase TiO2 nanoparticles 203 with a particle size of 15nm into 10ml of graphene oxide ethanol solution, the mass ratio of TiO2 nanoparticles 203 to graphene oxide in the solution is 1:20, mixing The solution was fully stirred on a magnetic stirrer for 10 hours;

[0044] Step 102: Spin-coat the graphene oxide mixed solution in step 101 onto the ITO conductive glass 200 at a low speed of 500r / min for 20s and a high speed of 2000r / min for ...

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Abstract

The invention discloses a high-stability resistive random access memory based on graphene oxide. The high-stability resistive random access memory includes a bottom electrode, a top electrode, and a resistive functional layer located between the two electrodes, the resistive functional layer is an oxidized graphene ethanol solution doped with TiO2 nanoparticles, which is stirred via a magnetic stirrer and spin-coated on the surface of the bottom electrode to form a thin film, and the thin film is irradiated via ultraviolet. Compared with the resistive random access memory without doping the TiO2 nanoparticles, the starting voltage value is obviously smaller than the corresponding value of the contrast device, and the power consumption during the filament formation can be effectively reduced; Vset and Vreset cumulative probability distributions for 100 consecutive switching operations are relatively concentrated and the electrical parameters are uniform; after the contrast device is consecutively switched for 600 times, the high and low resistance states of the device overlap each other and the device fails; and the high and low resistance states still maintain a large switching proportion (Roff / on-20) after the 1000 consecutive switching operations, and the work stability is high.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, and in particular relates to a graphene oxide-based high-stability resistive variable memory. Background technique [0002] As the feature size of traditional flash memory devices approaches the theoretical limit, the further improvement of its storage density is facing severe challenges. In the context of the increasing demand for information storage in modern society, it is urgent to find new solutions. Among many new types of memory such as ferroelectric memory (FeRAM), magnetic memory (MRAM), phase change memory (PRAM), and resistive memory (RRAM), RRAM is simple in structure, high in storage density, fast in read and write speed, and functional The advantages of low power consumption and compatibility with traditional CMOS technology stand out, and it is considered to be the next generation of non-volatile memory with great development potential. Its working principle can be explained...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00B82Y30/00B82Y10/00
CPCB82Y10/00B82Y30/00H10N70/24H10N70/8845H10N70/021
Inventor 徐海阳王中强朱佳雪谢瑜黎旭红刘益春
Owner NORTHEAST NORMAL UNIVERSITY
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