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Nitrogen-doped porous vertical graphene nanowall array and preparation method and application thereof

A graphene nano-wall and nitrogen-doped technology, which is applied in the field of nano-materials, can solve the problems of high cost, difficulty in obtaining VAGN, and high technical requirements of PECVD, so as to prevent interlayer accumulation, easy control of reaction conditions and processes, and unstructured will have a destructive effect

Active Publication Date: 2017-10-10
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the technical requirements for PECVD growth are relatively high
Freestanding VAGNs with certain morphologies are not easily obtained due to the support (e.g. planar substrate or foam-like framework) necessary for PECVD growth of VAGWs.
and the cost is too high

Method used

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  • Nitrogen-doped porous vertical graphene nanowall array and preparation method and application thereof
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  • Nitrogen-doped porous vertical graphene nanowall array and preparation method and application thereof

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Embodiment 1

[0035] A preparation method of a nitrogen-doped porous vertical graphene nanowall array, comprising the following steps:

[0036] (1) Activate the carbon cloth and prepare the nickel hydroxide precursor growth solution, cut the carbon cloth into a size of 1cm*2cm, arrange the carbon in an oven with a volume ratio of 1:1 ethanol and 30% hydrogen peroxide solution and heat it to 60 ℃ for 24 hours to obtain activated carbon cloth. The nickel hydroxide precursor growth solution formula is a mixed solution of 0.15M / L nickel chloride hexahydrate and 0.3M / L hexamethylenetetramine.

[0037] (2) The activated carbon is arranged in the nickel hydroxide precursor growth solution, heated to 100°C in an oven for 10 hours to grow nickel hydroxide to obtain nickel hydroxide / carbon cloth, and nickel hydroxide grows on the carbon cloth. Scanning electron microscope (SEM) image of nickel hydroxide / carbon cloth figure 1 shown.

[0038] (3) The obtained nickel hydroxide / carbon is arranged in t...

Embodiment 2

[0043] A preparation method of a nitrogen-doped porous vertical graphene nanowall array, comprising the following steps:

[0044] (1) Activate the carbon cloth and prepare the nickel hydroxide precursor growth solution, cut the carbon cloth into a size of 1cm*2cm, arrange the carbon in an oven with a volume ratio of 1:1 ethanol and 30% hydrogen peroxide solution and heat it to 60 ℃ for 24 hours to obtain activated carbon cloth. The nickel hydroxide precursor growth solution formula is a mixed solution of 0.15M / L nickel chloride hexahydrate and 0.3M / L hexamethylenetetramine.

[0045] (2) The activated carbon is placed in the nickel hydroxide precursor growth solution, heated to 100° C. in an oven for 10 hours to grow nickel hydroxide to obtain a nickel hydroxide / carbon cloth composite.

[0046] (3) The obtained nickel hydroxide / carbon is arranged in the mixed solution of dopamine hydrochloride-Tris, the concentration of Tris is 1.21g / L, the concentration range of dopamine hydr...

Embodiment 3

[0051] A preparation method of a nitrogen-doped porous vertical graphene nanowall array, comprising the following steps:

[0052] (1) Activate the carbon cloth and prepare the nickel hydroxide precursor growth solution, cut the carbon cloth into a size of 1cm*2cm, arrange the carbon in an oven with a volume ratio of 1:1 ethanol and 30% hydrogen peroxide solution and heat it to 60 ℃ for 24 hours to obtain activated carbon cloth. The nickel hydroxide precursor growth solution formula is a mixed solution of 0.15M / L nickel chloride hexahydrate and 0.3M / L hexamethylenetetramine.

[0053] (2) The activated carbon is placed in the nickel hydroxide precursor growth solution, heated to 100° C. in an oven for 10 hours to grow nickel hydroxide to obtain a nickel hydroxide / carbon cloth composite.

[0054] (3) The obtained nickel hydroxide / carbon is arranged in the mixed solution of dopamine hydrochloride-Tris, the concentration of Tris is 1.21g / L, the concentration range of dopamine hydr...

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Abstract

The invention provides a nitrogen-doped porous vertical graphene nanowall array. A compact coating layer is formed by means of nickel hydroxide serving as a template and the self-assembly property of dopamine, then high-temperature carbonization is conducted to prepare a nitrogen-doped vertical graphene nanowall array material, in-situ functional modification is conducted on the basis, the compound functional material loaded with noble metal nanoparticles, noble metal alloy nanoparticles, metal oxides, metal sulfide, metal phosphide, conductive polymers and the like is obtained, and application in the fields of supercapacitors, lithium ion batteries, water decomposition, electrochemical catalysis, enzyme-free biosensors and the like is explored.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials, and more specifically relates to a method for preparing a nitrogen-doped vertical graphene nanowall array and the preparation and application exploration of an in-situ functionalized material. Background technique [0002] Graphene can be regarded as a sheet of graphite, which is a two-dimensional nanocarbon material obtained by hexagonally linking sp2 hybridized carbon atoms, and has a conjugated structure. Its thickness is only 0.335nm, and it is the basic unit for constructing other dimensional carbonaceous materials (such as zero-dimensional fullerene, one-dimensional carbon nanotube, three-dimensional graphite). Graphene is the thinnest material ever discovered, and its discoverers won the 2010 Nobel Prize in Physics for this reason. Due to the unique two-dimensional structure of graphene, it has unique properties such as excellent electrical conductivity, carrier mobility, mechanical...

Claims

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Application Information

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IPC IPC(8): B82B1/00B82B3/00B82Y30/00B82Y40/00H01G11/36H01G11/86
CPCY02E60/13B82B1/008B82B3/0095B82Y30/00B82Y40/00H01G11/36H01G11/86
Inventor 王帅池凯肖菲袁号张哲野
Owner HUAZHONG UNIV OF SCI & TECH
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