Crystal mass bonding device and method

Abstract

The invention provides a crystal mass bonding device comprising a wax permeating tank, a partitioning plate and a plurality of crystal mass positioning blocks, wherein the partitioning plate and the multiple crystal mass positioning blocks are arranged in the wax permeating tank. The multiple crystal mass positioning blocks are arranged in the length direction of the wax permeating tank, and one end of each crystal mass positioning block is arranged on one side face of the partitioning plate. The device is simple in structure, convenient to use and especially suitable for wax permeating treatment among large-size quartz crystal wafers. The invention further provides a method for crystal mass bonding through the device. The method comprises the steps that firstly, the crystal mass bonding device is adopted to conduct melting treatment on bonding wax; then a crystal mass to be permeated by the wax is placed in the crystal mass bonding device to be subjected to normal-pressure wax pre-permeating treatment and vacuum wax permeating treatment in sequence, and a crystal mass wax-permeated semi-finished product is obtained; and finally the crystal mass wax-permeated semi-finished product is subjected to heating treatment and shaping treatment in sequence, and a wax-permeated crystal mass finished produced is obtained. The method is simple in step, and residual air between the adjacent quartz crystal wafers can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of quartz wafer processing, in particular to a crystal ingot device and a crystal ingot bonding method. Background technique [0002] During the processing of quartz wafers, it is necessary to cut large-sized quartz wafers to a size of 1 mm or even smaller. In order to avoid damage to the quartz wafers during cutting, the operator must first bond the quartz wafers into crystal ingots, and then adjust the size for processing. The commonly used method of sticking mounds is to fuse the glue into a glue solution in a certain proportion under high temperature conditions. At the same time, the quartz wafers that need to be shaped are divided into mounds according to a certain number, and the two ends of each mound are placed with protective glass. The mounds are placed in a row on a high-temperature heating plate, and a certain gap is maintained between each row. The quartz wafer needs to be placed on the heating...

AI Technical Summary

Problems solved by technology

However, when the size of the quartz wafer is large, the dialysis speed of the wax solution on the heating plate is very slow, and due to the insufficient dialysis of the wax solution, there are a large number of bubbles remaining in the bonded crystal ingot, which makes the quartz wafer bonded in the crystal ingot Severe breakage in subsequent processing

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