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N-doped CrO2 epitaxial thin film and preparation method thereof

A technology of epitaxial thin film and doping concentration, applied in the field of materials, can solve the problems of not expanding the preparation temperature range and the thermal stability of the thin film, the film forming rate, and improving the thermal stability, and achieve the thermal stability and preparation temperature range. Improved, easy operation, improved thermal stability

Inactive Publication Date: 2017-09-05
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] CrO 2 Although it is a magnetic material with good magnetic properties and a wide range of applications, it is in a metastable state at room temperature and has poor thermal stability.
Currently the most commonly used is the O 2 Preparation of CrO under the atmosphere 2 , but its preparation temperature can only be at 390 o Near C, higher than 400 o Cpure CrO 2 The material begins to decompose and Cr begins to appear in the film 2 o 3 impurity phase, lower than 380 o C, the CrO in the atmosphere 2 not available on TiO 2 Film formation or film formation rate on the substrate is extremely low
A recently proposed method for the preparation of CrO with Ar as the transport gas 2 epitaxial film, but he did not expand its preparation temperature range and thermal stability of the film, even though relatively easy to prepare CrO 2 Powder, for example, the patent number is "CN 101684002A" and the name is "a method for preparing nano-chromium dioxide", and its preparation temperature is only 350~380 o C
The currently disclosed methods are all just how to prepare high-purity CrO 2 material, yet to CrO 2 Specific preparation method of material doped with N element to improve its thermal stability

Method used

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  • N-doped CrO2 epitaxial thin film and preparation method thereof
  • N-doped CrO2 epitaxial thin film and preparation method thereof
  • N-doped CrO2 epitaxial thin film and preparation method thereof

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Effect test

Embodiment 1

[0025] A N-doped CrO 2 The preparation method of epitaxial film, the preparation method described in this embodiment comprises the following steps:

[0026] Step 1, first 75 parts of quality CrO 3 Put it into the quartz boat, put the quartz boat into the low temperature zone of the dual temperature zone tube furnace, and then put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace;

[0027] Step 2, continuously feed N into the tube furnace at a flow rate of 160mL / min 2 Under certain conditions, heat the high temperature zone to 310°C and start keeping warm;

[0028] Step 3: When the high-temperature zone starts to keep warm, start heating the low-temperature zone, heat the low-temperature zone to 260 ° C, and then keep the high-temperature zone and low-temperature zone for 3.5 hours, that is, in the TiO 2 N-doped CrO prepared on single crystal substrate 2 epitaxial film.

Embodiment 2

[0030] A N-doped CrO 2 The preparation method of epitaxial film, the preparation method described in this embodiment comprises the following steps:

[0031] Step 1, first 75 parts of quality CrO 3 Put it into the quartz boat, put the quartz boat into the low temperature zone of the dual temperature zone tube furnace, and then put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace;

[0032] Step 2, continuously feed N into the tube furnace at a flow rate of 150mL / min 2 Under certain conditions, heat the high temperature zone to 390°C and start keeping warm;

[0033] Step 3: When the high-temperature zone starts to keep warm, start heating the low-temperature zone, heat the low-temperature zone to 260°C, and then keep the high-temperature zone and low-temperature zone for 1.5 hours, that is, in the TiO 2 N-doped CrO prepared on single crystal substrate 2 epitaxial film.

Embodiment 3

[0035] A N-doped CrO 2 The preparation method of epitaxial film, the preparation method described in this embodiment comprises the following steps:

[0036] Step 1, first 75 parts of quality CrO 3 Put it into the quartz boat, put the quartz boat into the low temperature zone of the dual temperature zone tube furnace, and then put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace;

[0037] Step 2, continuously feed N into the tube furnace at a flow rate of 150mL / min 2 Under certain conditions, heat the high temperature zone to 430°C and start keeping warm;

[0038] Step 3: When the high-temperature zone starts to keep warm, start heating the low-temperature zone, heat the low-temperature zone to 260°C, and then keep the high-temperature zone and low-temperature zone for 1.5 hours, that is, in the TiO 2N-doped CrO prepared on single crystal substrate 2 epitaxial film.

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Abstract

The invention provides an N-doped CrO2 epitaxial thin film and a preparation method thereof. The method for preparing the N-doped CrO2 epitaxial thin film comprises the following steps: filling 75-99.99 parts by weight of CrO3 in a quartz boat, and putting the quartz boat into a low-temperature area of a double-temperature area tubular furnace; putting a TiO2 single crystal substrate into a high-temperature area of the double-temperature area tubular furnace; heating the high-temperature area to the temperature of 270-430 DEG C under the condition that N2 is continuously introduced into the tubular furnace at flow velocity of 150-250mL / min, and starting to maintain the temperature; starting to heat the low-temperature area while starting to maintain the temperature in the high-temperature area, heating the low-temperature area to the temperature of 240-280 DEG C, maintaining the temperature in the high-temperature area and the low-temperature area for 1.5-3 hours, thereby obtaining the N-doped CrO2 epitaxial thin film on the TiO2 single crystal substrate. According to the N-doped CrO2 epitaxial thin film disclosed by the invention, the preparation temperature interval is 270-430 DEG C, and the heat stability is greatly improved, so that the application range is wide.

Description

technical field [0001] The present invention belongs to the field of materials. Specifically relates to an N-doped CrO2 epitaxial film and a preparation method thereof. Background technique [0002] In recent years, spintronics has become one of the focuses of international condensed matter physics and materials science, and has attracted extensive attention. As the simplest ferromagnetic semimetal oxide CrO 2 is a traditional magnetic recording material, CrO 2 It has been confirmed by experiments that it has a spin polarizability close to 100%, and CrO 2 The Curie temperature is as high as 396K. Therefore, CrO 2 It is considered to be one of the electrode materials with great development potential and ideal spintronic devices. [0003] CrO 2 Although it is a magnetic material with good magnetic properties and a wide range of applications, it is in a metastable state at room temperature and has poor thermal stability. Currently the most commonly used is the O 2 Pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/02C30B29/16C23C14/08H01F10/193H01F41/22
CPCC30B23/025C23C14/083C30B29/16H01F10/1936H01F41/22
Inventor 卢志红程明张振华熊锐
Owner WUHAN UNIV OF SCI & TECH
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