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Preparation method of graphene quantum dot dispersion liquid

A technology of graphene quantum dots and dispersion liquid, applied in the field of material science, can solve the problems of introducing wrinkles, holes, graphene mechanical properties, and electrical properties into graphene, and achieves the effects of being suitable for promotion, environment-friendly, and efficient in preparation

Active Publication Date: 2017-08-29
QINGDAO UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] In addition, although the chemical vapor deposition method is currently the best method for preparing large sheets of high-quality graphene, the graphene prepared by this method will inevitably introduce defects such as wrinkles and holes during the growth and transfer processes. The mechanical properties and electrical properties of graphene will have a serious impact; therefore, the present invention combines chemical vapor deposition and ultrasonic methods to develop a simple, environmentally friendly and efficient preparation method for graphene quantum dot dispersions, which can Easy, convenient and large-scale preparation of high-quality graphene quantum dots, with good application value and market prospects

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  • Preparation method of graphene quantum dot dispersion liquid
  • Preparation method of graphene quantum dot dispersion liquid
  • Preparation method of graphene quantum dot dispersion liquid

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Embodiment 1

[0020] The specific steps of the preparation method of the graphene quantum dot involved in the present embodiment are:

[0021] (1) Put a 1cm×1cm or 2cm×2cm copper foil with graphene film grown in 20-80mL ammonium persulfate (0.05-0.5M) corrosion solution for 3-8h to remove the copper foil and obtain graphene-containing Thin film corrosion solution;

[0022] (2) Ultrasonic treatment (power 50-200W) of the corrosion solution containing graphene film obtained in step (1) for 10-150min, and then extracted with dichloromethane to obtain graphene quantum dot dispersion.

[0023] The graphene quantum dot dispersion liquid prepared in the present embodiment is photographed under natural light (such as figure 2 Shown) fluorescence is good; Among them, the atomic force microscope scanning image of graphene quantum dots (such as image 3 shown) and the height distribution map (as Figure 4 shown).

Embodiment 2

[0025] The specific steps of the preparation method of the graphene quantum dot involved in the present embodiment are:

[0026] (1) Graphene prepared by chemical vapor deposition is used as raw material, and 2-20cm 2 The metal foil with the graphene film grown is put into 20-200mL ferric nitrate (0.1-0.5g / ml) solution and corroded for 2-10h to remove the metal foil to obtain an etching solution containing the graphene film;

[0027] (2) Ultrasonic treatment (power 50-200W) of the corrosion solution containing the graphene film obtained in step (1) for 10-150 min, and then extracted with chloroform to obtain the graphene quantum dot dispersion.

[0028] The graphene quantum dot dispersion liquid prepared in the present embodiment is photographed under 365nm ultraviolet light (such as Figure 5 Shown); wherein the transmission electron microscope image of graphene quantum dots (such as Figure 6 shown), high-resolution transmission electron microscope images (such as Figure...

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Abstract

The invention belongs to the technical field of material science, and relates to an environment-friendly high-efficiency convenient and rapid preparation method of a graphene quantum dot dispersion liquid. According to the environment-friendly high-efficiency convenient and rapid preparation method, graphene prepared via chemical vapor deposition is taken as a raw material, metal foil with graphene film is immersed in a corrosive liquid for 2 to 10h of corrosion so as to remove the metal foil and obtain a corrosion solution containing graphene film, wherein the volume amount of the corrosive liquid is 10 times of that of the metal foil; the corrosion solution is subjected to ultrasonic treatment at a frequency ranging from 50 to 200W for 10 to 150min, and extraction with an organic solvent is carried out so as to obtain the graphene quantum dot dispersion liquid. According to the environment-friendly high-efficiency convenient and rapid preparation method, preferable utilization of defects introduced via preparation of graphene via chemical vapor deposition in growth and transfer process of graphene is realized, no strong oxidant or toxic reagent is added, no complex oxidoreduction treatment is needed, large sheet graphene is smashed into graphene quantum dot only via ultrasonic treatment, oxidation destroy on graphene is avoided, the crystal structure of graphene quantum dot is protected as far as possible. The operation of the preparation method is simple; preparation efficiency is high; and the preparation method is friendly to the environment, and is worthy of popularization.

Description

Technical field: [0001] The invention belongs to the field of material science and technology, and relates to an environmentally friendly, efficient and convenient method for preparing a graphene quantum dot dispersion liquid, which can prepare high-quality graphene from defective graphene prepared by chemical vapor deposition after ultrasonic pulverization. Graphene quantum dot dispersion. Background technique: [0002] Graphene quantum dots (GQDs) are quasi-zero-dimensional carbon materials. As the latest member of the graphene family, in addition to the excellent properties of graphene, they also exhibit a series of new properties due to quantum confinement effects and boundary effects. properties, it has important potential applications in the fields of biology, medicine, materials, new semiconductor devices, etc., and also has a wide range of applications in solar cells, electronic devices, optical dyes, biomarkers, and composite particle systems; thus attracting chemis...

Claims

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Application Information

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IPC IPC(8): C01B32/194B82Y40/00
CPCB82Y40/00C01P2002/84C01P2004/01C01P2004/04C01P2004/64
Inventor 于希萌
Owner QINGDAO UNIV
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