Substrate liquid processing apparatus and method

Abstract

The present invention relates to a substrate liquid processing apparatus which etches and cleans a substrate for a semiconductor. The substrate liquid processing apparatus comprises: a substrate supporting part for supporting a substrate on the top of a table being spaced apart from the substrate so that a surface to be processed is facing the bottom of the table; a rotational driving part for driving a rotation axis which rotates the table; and a processing liquid supplying part for supplying, in a processing space between the table and the substrate, processing liquid in a mist state in which gas is mixed or processing liquid in a steam state. According to the substrate liquid processing apparatus, it is possible to uniformize an atmosphere of the processing space between the substrate and the table, and to uniformly spray the processing liquid on the surface to be processed.

Description

technical field [0001] The present invention relates to a substrate liquid processing apparatus for substrate etching and cleaning of semiconductor substrates, more specifically, a substrate liquid processing apparatus and method for average liquid processing capable of minimizing the supply of processing liquid to a substrate processing surface. Background technique [0002] In order to manufacture semiconductor devices, etching and cleaning processes are necessary when forming multilayer thin films on substrates. [0003] Generally speaking, wet etching and cleaning equipment performs etching and cleaning processes by rotating a platform portion provided with chuck pins that support a substrate, and supplies a processing liquid or cleaning liquid to the substrate to perform an etching process and a cleaning process. The treatment liquid recovery part recovers the treatment liquid and the cleaning liquid. [0004] In addition, in the conventional substrate liquid processin...

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Problems solved by technology

[0008] However, when the electric heater is heated while the processing liquid at room temperature is supplied to the processing surface, when the liquid processing is performed, the shape of the substrate pattern is defective, and defects often occur during the liquid processing of the substrate.

[0009] Moreover, after the substrate liquid treatment is completed at high temperature, deionized water with a relatively low temperature is supplied. Due to the huge temperature difference between the heated treatment solution and deionized water, the chuck pin of the substrate is detached after the shape is deformed, or as the processing The temperature of the liquid drops sharply, resulting in an increase in the viscosity of the treatment liquid, and there is a problem of granulation

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