Method for improving drop of tube cores in GaAs-based LED chip cutting process
A LED chip and die technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of no specific solution to the die, and achieve the effect of improving viscosity, improving product yield, and releasing its own stress.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0033] A method for improving die loss during the cutting process of GaAs-based LED chips, the steps of which are:
[0034] a) Half-cut the surface of the chip; the height of the half-cut knife is set to 130 μm, the cutting speed is 50 mm / s, the protrusion of the knife edge is 550 μm, the width of the cutting groove is 25 μm, and the depth is 20% of the chip thickness. b) Baking the chip after the half-cut operation; set the baking temperature to 50°C and the baking time to 100s. c) After the chip is baked, carry out the blue film laminating operation; set the heating temperature of the film laminating machine to 50°C, and use the blue film of SPV-224 220mm*100m. d) After the film is pasted, the chips are then baked: set the baking temperature to 70°C and the baking time to 100s. e) After the film is baked, perform a full cut on the half-cut knife mark: the full-cut knife height is set to 60 μm, the cutting speed is 20 mm / s, the blade extension is 560 μm, and the cutting groo...
Embodiment 2
[0036] The difference from Example 1 is that the baking temperature in step b) is 50°C and the baking time is 110s. The baking temperature in step d) is 72°C, and the baking time is 110s. The cutting speed of full cut in step e) is 30mm / s.
Embodiment 3
[0038] The difference from Example 1 is that the baking temperature in step b) is 53°C and the baking time is 110s. The baking temperature in step d) is 73°C, and the baking time is 110s. In step e), the cutting speed of the full cut is 30 mm / s, and the knife height is 80 μm.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com