Method of preparing solar cell on N-type silicon substrate

A technology for solar cells and silicon substrates, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low market share of N-type cells, immature preparation processes, and difficulty in equipment fabrication, saving conventional processes, The effect of low equipment cost and simple method

Inactive Publication Date: 2017-08-18
山东力诺太阳能电力股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the early stage, due to the immature preparation process, the difficulty of equipment manufacturing, and the inability to mass produce, etc., the market share of N-type batteries was low, and N-type batteries were not generally recognized by the industry.

Method used

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  • Method of preparing solar cell on N-type silicon substrate
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  • Method of preparing solar cell on N-type silicon substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A method for preparing double-sided solar cells based on N-type silicon wafers

[0029] (1) First, the N-type silicon wafer is cleaned and textured, and a pyramid structure is formed on both sides of the silicon wafer;

[0030] (2) Spin-coating equipment is used on the front surface of the N-type silicon wafer after texturing to coat a layer of high-concentration organic boron source with a boron content greater than 50%, so as to form a P-type doped region 2 on the surface, and make the front PN Junction; the rotation speed of the spin coating process is 5000R / min, the thickness of the boron source after coating is 5um, and the depth of the boron source doping node after diffusion is 150nm;

[0031] (3) N-type phosphorus source coating is performed on the back of the Si wafer by MBE or spin coating to form an N-type doped region 3 on the surface; the front and back of the battery are spin-coated, and MBE is used on the back to form two layers of superimposed PN Juncti...

Embodiment 2

[0039] A method for preparing double-sided solar cells based on N-type silicon wafers

[0040] (1) First, the N-type silicon wafer is cleaned and textured, and a pyramid structure is formed on both sides of the silicon wafer;

[0041] (2) Spin-coating equipment is used on the front surface of the N-type silicon wafer after texturing to coat a layer of high-concentration organic boron source with a boron content greater than 50%, so as to form a P-type doped region 2 on the surface, and make the front PN Junction; spin coating process speed 10000R / min, boron source thickness after coating is 10um, boron source doping node depth is 500nm after diffusion advance;

[0042] (3) N-type phosphorus source coating is performed on the back of the Si wafer by MBE or spin coating to form an N-type doped region 3 on the surface; the front and back of the battery are spin-coated, and the back is spin-coated to form a two-layer superposition Shaped PN junction, the battery can generate elec...

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Abstract

The invention discloses a method of preparing a solar cell on an N-type silicon substrate. The method is simple, can adapt to the existing conventional crystalline silicon solar cell production equipment, does not need a lot of capital investment, and can realize industrialization quickly. The solar cell prepared by the method avoids the light-induced degradation phenomenon of crystalline silicon solar cells. The solar cell prepared by the method can be installed at multiple angles for double-sided power generation. The comprehensive efficiency and the comprehensive utilization rate are greatly improved. The cost per kilowatt hour of electricity generated by photovoltaic modules is reduced greatly.

Description

technical field [0001] The invention relates to a method for preparing a solar cell, in particular to a method for preparing a double-sided solar cell on an N-type silicon substrate. Background technique [0002] The grid parity of photovoltaic power generation is the driving force to promote the technological innovation of solar cell modules. Therefore, developing an industrial technology with simple process flow, high photoelectric conversion efficiency and high power generation has become the tireless pursuit of photovoltaic practitioners. [0003] In the current industry, P-type crystalline silicon batteries occupy the vast majority of the market due to their simple preparation process and high equipment development maturity. price target. Various solutions have emerged in the industry, including selective emitter solar cells, back contact solar cells, HIT cells, etc. At the same time, the emergence of new technologies, such as laser technology, LIP technology, and pho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/0684H01L31/1804Y02E10/547Y02P70/50
Inventor 宁纪林刘林华姜言森曹征征纪丹韩玉杰岳远振许吉林李树成韩硕
Owner 山东力诺太阳能电力股份有限公司
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