Preparing method of waterproof electric-breakdown-resisting coating
A technology of resistance to electrical breakdown and coating, applied in the field of ion chemical vapor deposition, can solve the problems of harsh coating preparation conditions, high cost of raw materials, signal blocking, etc. Electric breakdown performance, the effect of improving the resistance to underwater energization time
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Embodiment 1
[0057] A method for preparing a waterproof and breakdown-resistant coating, characterized in that it comprises the following steps:
[0058] (1) Place the base material in the reaction chamber of the plasma chamber, continuously evacuate the reaction chamber, pump the vacuum in the reaction chamber to 10 millitorr, and feed inert gas;
[0059] In step (1), the substrate is a solid material, and the solid material is an electronic component-circuit board.
[0060] And after the waterproof and electric breakdown resistant coating is prepared on the surface of the substrate, any interface thereof can be exposed to the environment described in the international industrial waterproof grade IPX1.
[0061] In step (1), the volume of the plasma chamber is 50 L, and the temperature of the plasma chamber is controlled at 30° C.; the flow rate of the inert gas is 5 sccm, and the inert gas is argon.
[0062] (2) Introduce the monomer vapor to a vacuum degree of 30 millitorr, turn on the ...
Embodiment 2
[0077] The basic process steps of this embodiment are the same as those of Example 1, and the different process parameters are as follows:
[0078] 1. In step (1), the vacuum in the reaction chamber is pumped to 40 millitorr, and an inert gas is introduced;
[0079] The base material is a solid material, and the solid material is an electrical component—a TV casing, and any interface of the base material can be exposed to the environment described in the international industrial waterproof grade IPX3 after the waterproof and electric breakdown resistant coating is prepared on the surface of the base material. .
[0080] The volume of the plasma chamber is 260L, and the temperature of the plasma chamber is controlled at 40° C.; the flow rate of the inert gas is 60 sccm, and the inert gas is helium.
[0081] 2. In step (2), feed the monomer steam to a vacuum of 80 mTorr, and start the plasma discharge;
[0082] The introduction of the monomer vapor is to atomize and volatilize...
Embodiment 3
[0094] The basic process steps of this embodiment are the same as those of Example 1, and the different process parameters are as follows:
[0095] 1. In step (1), the vacuum in the reaction chamber is pumped to 100 millitorr, and an inert gas is introduced;
[0096] The base material is a solid material, and the solid material is an electronic component - a mobile phone, and any interface of the base material can be exposed to the environment described in the international industrial waterproof grade standard IPX4 after the waterproof and electric breakdown resistant coating is prepared on the surface of the base material.
[0097] The volume of the plasma chamber is 380 L, and the temperature of the plasma chamber is controlled at 45° C.; the flow rate of the inert gas is 130 sccm, and the inert gas is a mixture of helium and argon.
[0098] 2. In step (2), feed the monomer steam to a vacuum of 130 mTorr, and start the plasma discharge;
[0099] The introduction of the monome...
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