GaN nanometer column grown on Si(111) substrate and preparation method and application thereof

Abstract

The invention discloses a preparation method of a GaN nanometer column grown on an Si(111) substrate. The preparation method comprises the following steps: (1) selection of the substrate and crystal orientation thereof: adopting an Si substrate; (2) substrate cleaning; (3) substrate annealing treatment; (4) high-temperature growth of the GaN nanometer column: growing the GaN nanometer column under the condition of 900 to 1100 DEG C, wherein the growth time is 0.5 to 1.5 hours; and (5) low-temperature growth of the GaN nanometer column: growing the GaN nanometer column under the condition of 650 to 800 DEG C, wherein the growth time is 1.5 to 2.5 hours. The invention also discloses the GaN nanometer column grown on the Si(111) substrate obtained by the preparation method and application thereof. The non-uniformity of the nanometer column grown at high temperature is improved, the column disordered condition of the nanometer column grown at low temperature is also improved, and meanwhile the preparation method has the advantages of simple process, short production cycle and the like.

Description

technical field [0001] The invention relates to a GaN nano column, in particular to a GaN nano column grown on a Si (111) substrate, a preparation method and an application thereof. Background technique [0002] GaN and III-nitrides are widely used in light-emitting diodes (LEDs), lasers, and optoelectronic devices due to their advantages such as large band gap, stable physical and chemical properties, high thermal conductivity, and high electron saturation velocity. Compared with other wide-bandgap semiconductor materials, GaN materials not only have the above-mentioned advantages, but also their nanoscale GaN materials have more novel characteristics in terms of quantum effects, interface effects, volume effects, and size effects. [0003] GaN nanomaterials have a series of novel properties due to the "size effect", which makes it have great prospects in basic physical science and new technology applications, and has become a current research hotspot. The GaN nanocolumn s...

AI Technical Summary

Problems solved by technology

However, due to the large lattice mismatch and thermal mismatch between Si and GaN; at the same time, the distribution of GaN nanocolumns is not uniform in the early stage of growth, and the difference in the distribution of Ga and N atoms during the growth process leads to the growth of GaN nanocolumns. , uneven diameter length, poor order, etc.

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