Silicon-on-insulator (SOI) six-transistor static random access memory (SRAM) unit and fabrication method thereof

Abstract

The invention provides a silicon-on-insulator (SOI) six-transistor static random access memory (SRAM) unit and a fabrication method thereof. The unit comprises a first phase inverter, a second phase inverter and an acquisition tube, wherein the first phase inverter comprises a first P-channel metal oxide semiconductor (PMOS) transistor and a first N-channel metal oxide semiconductor (NMOS) transistor, the second phase converter comprises a second PMOS transistor and a second NMOS transistor, and the acquisition tube comprises a third NMOS transistor and a fourth NMOS transistor. In the SOI six-transistor SRAM unit, tunneling diode structures are embedded into sources of the four transistors forming the first phase inverter and the second phase inverter, power consumption leakage and threshold voltage drift of the transistors caused by a floating body effect and a parasitic triode effect in a partially-depleted (PD) SOI device can be effectively suppressed on the condition of no increase on device area, and the noise resistant capability of the unit is improved; moreover, the fabrication method also has the advantages of simple manufacturing process and the like, and is completely compatible with an existing logic process; and a central symmetric structure and a sharing structure between units are employed in the unit, so that a storage array is convenient to form, and the design period of an SRAM chip is favorably shortened.

Description

technical field [0001] The invention belongs to the field of memory design and manufacture, and relates to an SOI six-transistor SRAM unit and a manufacturing method thereof. Background technique [0002] Since the invention of SOI technology in the 1980s, it has small parasitic capacitance, low power consumption, fast speed and natural anti-Single-Event-Latchup (SEL) ability compared with ordinary bulk silicon technology, making SOI The technology is very suitable for working in System-on-Chips (SoC), low power consumption and radiation resistance; in addition, Static Random Access Memory (SRAM) is widely used in consumer electronics, automotive electronics, processing Therefore, applying SOI technology to SRAM design has certain advantages. [0003] According to the degree of depletion of the MOS tube body region, SOI can be further divided into fully depleted (Full-Depleted, FD) SOI and partially depleted (Partially-Depleted, FD) SOI. For partially depleted SOI technolo...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a SOI six-transistor SRAM unit and a manufacturing method thereof, which are used to solve the problems of large occupied area, poor stability, and leakage power of the SOI six-transistor SRAM unit in the prior art. The problem of high power consumption and weak anti-noise ability

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