Preparation method of black lithium niobate wafer

A production method, lithium niobate technology, applied in the field of crystal materials, lithium niobate black film production, can solve the problems of complicated process, unsafe, weakening, etc., and achieve the effect of simple and fast operation, low equipment requirements and low price

Inactive Publication Date: 2017-07-07
CHINA ELECTRONICS TECH GRP NO 26 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Although the lithium niobate black sheet produced by the existing reduction treatment has the characteristics of low resistivity and low transmittance, there are disadvantages such as complex process, low efficiency, excessive reduction, and unsafety. The purpose of the present invention is to propose a A lithium niobate black sheet manufacturing method with simple operation, safety, high efficiency, low cost and no influence on the processing quality of the wafer surface. This method reduces the resistance of the wafer without affecting the piezoelectric performance and single domain of lithium niobate rate, weaken or even eliminate the pyroelectric effect of the chip itself, and enhance the absorption capacity in the visible light region

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1: the lithium niobate wafer to be processed is put into the crucible container successively, and carbon powder or carbon block are put into another crucible container simultaneously, then the container of packing lithium niobate wafer and carbon powder or carbon block are put into The carbon block container is placed in a heat treatment furnace at the same time, and then the temperature is raised to 500°C at a rate of 120°C / h for reduction treatment for 4 hours. After the heat preservation is over, the temperature is lowered to room temperature at a rate of 120°C / h, and the lithium niobate wafers are taken out one by one, and the black wafers are completed. The resistivity of the prepared lithium niobate black sheet is about 7×10 12 Ω.cm or so.

Embodiment 2

[0033] Embodiment 2: the lithium niobate wafer to be processed is put into the crucible container successively, and carbon powder or carbon block are put into another crucible container simultaneously, then the container of loading lithium niobate wafer and the carbon powder or carbon block are put into The carbon block container is placed in a heat treatment furnace at the same time, and then the temperature is raised to 700°C at a rate of 200°C / h for reduction treatment for 5 hours. After the heat preservation is over, the temperature is lowered to room temperature at a rate of 200°C / h, and the lithium niobate wafers are taken out one by one, and the black wafers are completed. The resistivity of the prepared lithium niobate black sheet is about 1×10 12 Ω.cm or so.

Embodiment 3

[0034]Embodiment 3: the lithium niobate wafer to be processed is put into the crucible container successively, and carbon powder or carbon block are put into another crucible container simultaneously, then the container of loading lithium niobate wafer and the carbon powder or carbon block are put into The carbon block container is placed in a heat treatment furnace at the same time, and then the temperature is raised to 700°C at a rate of 200°C / h for reduction treatment for 10 hours. After the heat preservation is over, the temperature is lowered to room temperature at a rate of 200°C / h, and the lithium niobate wafers are taken out one by one, and the black wafers are completed. The resistivity of the prepared lithium niobate black sheet is about 5×10 11 Ω.cm or so.

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PUM

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Abstract

The invention discloses a preparation method of a black lithium niobate wafer. The black lithium niobate wafer to be treated is put in a container A, meanwhile a reducing agent is put in a container B, then the container A containing the black lithium niobate wafer and the container B containing the reducing agent are put in a thermal treatment furnace, reducing treatment is performed in air atmosphere at the reducing temperature, and cooling is performed to obtain the black lithium niobate wafer. The preparation method is simple and safe in operation, high in efficiency and low in cost and does not affect the surface processing quality of the wafer. By adopting the method, the electrical resistivity of the wafer is reduced on the premise that the piezoelectric property and single domain property of lithium niobate are not affected, the pyroelectric effect of the wafer itself is weakened or eliminated, and the absorbing capacity of a visual light zone is strengthened.

Description

technical field [0001] The invention relates to a crystal material, in particular to a method for manufacturing a lithium niobate black sheet, and belongs to the field of crystal post-processing. Background technique [0002] Lithium niobate single crystal is an excellent multifunctional artificial crystal with good piezoelectric properties. Surface acoustic wave (SAW) devices made of this material, such as filters, resonators, oscillators, etc., are widely used in mobile Civil and military fields such as communications, radar, and electronic countermeasures. Due to the wide application range and large amount of lithium niobate crystals, the production of lithium niobate in the world has already reached a large scale, with an annual output of hundreds of tons. It is an indispensable functional material for the development of new electronic devices in the IT industry. [0003] In industry, lithium niobate crystals are mainly grown by pulling method, usually using platinum cr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/30C30B33/02
CPCC30B29/30C30B33/02
Inventor 龙勇石自彬于明晓丁雨憧徐扬付昌禄
Owner CHINA ELECTRONICS TECH GRP NO 26 RES INST
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