a semiconductor device

Abstract

The embodiment of the present invention discloses a semiconductor device, which includes: a substrate; a multilayer semiconductor layer located on the substrate, an active region and a passive region located outside the active region are arranged on the multilayer semiconductor; a gate, a source, and a drain located within the active region; and a heat dissipation layer covering at least a portion of the active region and including a heat dissipation material. In the present invention, a heat dissipation layer covering at least a part of the active area is provided in the semiconductor device. The arrangement of the heat dissipation layer can increase the heat conduction path of the semiconductor device in the plane direction, and accelerate heat from the heat source inside the semiconductor device to the outside of the semiconductor device. Conduction, improve the heat dissipation effect of semiconductor devices, reduce the temperature inside the semiconductor device, make the thermal field distribution inside the semiconductor device more uniform, and improve the reliability of the semiconductor device.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor technologies, and in particular, to a semiconductor device. Background technique [0002] Gallium nitride GaN semiconductor devices have significant advantages such as large band gap, high electron mobility, high breakdown field strength, and high temperature resistance. Compared with the first-generation semiconductor silicon and the second-generation semiconductor gallium arsenide, it is more suitable for making high-temperature , high voltage, high frequency and high power electronic devices have broad application prospects. [0003] GaN semiconductor devices usually work in a high-power and high-current environment, and the working conditions will cause high heat to be generated in the active region of the GaN semiconductor device, which will lead to an increase in the temperature of the device structure, and the increase in temperature will cause GaN semiconductor The performance of the...

AI Technical Summary

Problems solved by technology

[0005] An embodiment of the present invention provides a semiconductor device to solve the problem of poor heat dissipation of semiconductor devices in the prior art

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