Heat Dissipation Structure and Packaging Technology of igbt Module in Power Converter

A technology of heat dissipation structure and packaging technology, which is applied in the manufacture of semiconductor devices, electric solid devices, semiconductor/solid devices, etc., can solve the problems of working life and reliability affecting the normal operation of devices or systems, and achieve excellent in-plane thermal conductivity, Effect of enhancing reliability and satisfying heat dissipation requirements

Active Publication Date: 2019-03-22
HUANGSHAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The faults of medium and high voltage power converters due to the failure of IGBT modules account for more than 90%. When the IGBT modules are turned on or off repeatedly, failure or fatigue effects will occur under repeated thermal shocks, and their working life and reliability will be reduced. Affect the normal operation of the entire device or system

Method used

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  • Heat Dissipation Structure and Packaging Technology of igbt Module in Power Converter
  • Heat Dissipation Structure and Packaging Technology of igbt Module in Power Converter
  • Heat Dissipation Structure and Packaging Technology of igbt Module in Power Converter

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Embodiment Construction

[0034] The present invention will be further described below in conjunction with drawings and embodiments.

[0035] The invention proposes a heat dissipation structure of an IGBT module in a power converter, including a substrate, a chip, a heat sink, a graphene heat dissipation layer, a graphene-based interconnection material, a busbar and silica gel.

[0036] Wherein the monolayer graphene film prepared by chemical vapor deposition is used as the heat dissipation layer for the surface of the emitter 12 of the first IGBT chip and the surface of the collector 22 of the second IGBT chip, see figure 1 and figure 2 . figure 1 The first IGBT chip 11 has an emitter 12 and a gate 13 on the upper surface of the first IGBT chip, and the upper surface of the first IGBT chip emitter 12 is a first single-layer graphene film 10 . figure 2 There is a collector electrode 22 of the second IGBT chip on the upper surface of the second IGBT chip 21 , and the second single-layer graphene fil...

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Abstract

The invention relates to a heat dissipation structure and packaging process of an IGBT module in a power converter. The structure includes a substrate, a chip, a heat sink, a graphene heat dissipation layer, a graphene-based interconnect material, a busbar and silica gel; chemical vapor deposition is used The single-layer graphene film prepared by the method is used as the heat dissipation layer on the surface of the chip. By exerting its excellent in-plane thermal conductivity, the local hot spot heat of the IGBT module in the power converter is quickly and laterally transferred to the heat sink; the oxidation-reduction method or solvent The few-layer graphene powder prepared by the exfoliation method is filled into the multi-modal silver particle conductive adhesive to enhance its electrical and thermal conductivity, and use it as the interconnection material between the chip and the substrate, the heat sink and the substrate, and improve the heat transfer from the chip to the substrate. The longitudinal conduction capacity of the substrate; the interconnection method of chip mounting is used to shorten the heat conduction path, enhance the heat dissipation performance of the overall structure, and realize the effective heat dissipation of local high heat flux hot spots, thereby reducing the maximum temperature of the IGBT module in the power converter and improving the device. service life.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a heat dissipation structure and packaging process of an IGBT module in a power converter. Background technique [0002] With the development of new power generation technologies such as wind power and solar photovoltaic power generation, distributed power generation systems have gradually become an effective way to meet the demand for load growth, reduce environmental pollution, and improve comprehensive energy utilization efficiency and power supply reliability. The demand for power converter capacity for energy conversion and storage between the generator and the grid is increasing, which requires the power device IGBT module to have a higher power level, and the failure rate of the large-capacity IGBT module cannot be ignored. [0003] The faults of medium and high voltage power converters due to the failure of IGBT modules account for more than 90%. When t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48H01L23/373H01L25/07
CPCH01L25/072H01L21/4882H01L23/3738H01L2224/48091H01L2224/73265H01L2924/00014
Inventor 鲍婕宁仁霞陈珍海何聚侯丽王政留
Owner HUANGSHAN UNIV
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