Glass corrosion mask layer method
A technology of glass and mask, applied in the field of micromachining of mechanical systems
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0039] The technical scheme of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0040] The material used is an N-type silicon wafer with a thickness of 300 μm, a resistivity of 1~10Ω / cm, and a crystal orientation; the glass is 7740 glass with a thickness of 500 μm.
[0041] The masking method of the present embodiment, its steps are as follows:
[0042] (1) if figure 1 As shown, the glass 2 and the silicon wafer 1 are bonded by the method of hydroxide catalyzed bonding, specifically:
[0043] (a) Clean the silicon wafer 1 and the glass 2 with a mixture of sulfuric acid and hydrogen peroxide;
[0044] (b) Oxidize the silicon wafer 1 in an oxidation furnace, and the thickness of the oxide layer 3 is 1 μm;
[0045] (c) Drop KOH aqueous solution on the glass 2, the ratio is 1:128, and the drop volume is 0.4 μL / cm 2 ;
[0046] (d) Gently press the silicon wafer 1 with the oxide layer 3 on the glass 2 on the side dripping...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
electrical resistivity | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com