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Method based on in situ preparation of target substrates for transferring graphene

A target substrate, in-situ preparation technology, applied in the field of materials science, can solve the problems of reducing the quality of graphene, incomplete structure matching, affecting the conductivity or barrier of graphene, etc., to improve quality, improve conductivity and barrier properties Effect

Inactive Publication Date: 2019-03-05
秦彦哲
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The biggest disadvantage of this method is that both the carrier and the target are solid, so there is a lack of complete matching of the structure on the microscopic level. When the initial solid phase carrier is removed, part of the graphene is in a suspended state or a wrinkled state due to the loss of support. Some graphene randomly develops into defects, which significantly reduces the quality of graphene, which in turn seriously affects the properties of graphene such as conductivity or barrier properties.

Method used

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  • Method based on in situ preparation of target substrates for transferring graphene
  • Method based on in situ preparation of target substrates for transferring graphene
  • Method based on in situ preparation of target substrates for transferring graphene

Examples

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Embodiment 1

[0044] figure 1 The schematic diagram of the transfer graphene method provided by the invention; figure 1 As shown, (1) uniformly coat CVD graphene on copper with polymer solution; (2) immerse the coated structure in water, causing phase inversion, thereby forming a porous network; (3) by floating the structure in the Ammonium sulfate solution goes up and removes copper; (4) the graphene that finally obtains. That is, the target substrate changes from a liquid phase to a solid phase during the transfer process.

[0045] Specifically, the present invention provides a method for transferring graphene based on in-situ preparation of a target substrate, comprising the following steps:

[0046] S100: Preparing graphene on a solid-phase carrier copper sheet by chemical vapor deposition.

[0047] S101: uniformly coating the target substrate polymer solution on the surface of the graphene deposited on the copper sheet; wherein, the polymer solution is a solution obtained by dissolv...

Embodiment 2

[0052] Image 6 The schematic diagram of the transfer graphene method provided by the invention; Image 6 As shown, the raw material components in the target substrate are transformed from gaseous state to solid state through chemical reaction during the transfer process, for example: the raw material components of the target substrate include the first gas (i.e. Image 6 Component 1) and the second gas (i.e. Image 6 Component 2 in ).

[0053] Specifically, the present invention provides a method for transferring graphene based on in-situ preparation of a target substrate, comprising the following steps:

[0054] S100: Preparing graphene on a solid-phase carrier copper sheet by chemical vapor deposition.

[0055] S101: Put the graphene deposited on the copper sheet into an airtight container, and pass in the first gas; then vacuumize so that only one layer of gas molecules is adsorbed on the surface of the graphene.

[0056] S102: Passing a second gas into the product obt...

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Abstract

The invention relates to a method for transferring grapheme based on in-situ preparation of a target substrate. The method comprises the following steps: S101, coating the surface of the grapheme deposited on a solid-phase carrier and / or depositing the target substrate, wherein at least one of raw material components in the target substrate is in a non-solid phase state; S102, processing a product obtained in the S101 or performing spontaneous phase transition on the product, so that the raw material component in the non-solid phase state in the target substrate is converted into a solid phase state; S103, separating and removing the solid phase carrier in a product obtained in the S102 to realize the transfer of the grapheme. With the adoption of the method provided by the invention, the large area of grapheme can be transferred to different target substrates with high quality; in the transferring process, the target substrate realizes the phase transition process from the non-solid phase state to the solid phase state, so that the perfect fit of the target substrate with the grapheme is always kept, and further, the defects of the graphene are minimized when the solid phase carrier is subsequently removed.

Description

technical field [0001] The invention relates to the technical field of material science, in particular to a method for in-situ preparation of transfer graphene on a target substrate. Background technique [0002] Graphene is carbon atoms separated by sp 2 The two-dimensional material formed by the arrangement of bonds and honeycomb lattice can extend infinitely in two-dimensional space, and is considered to be the thinnest material in the universe and also the strongest material. Graphene has impenetrability, excellent mechanical properties, transparency, and electrical conductivity, and is considered an ideal material for separation applications. It has become a research hotspot in the fields of physics, chemistry, biology, and materials science. However, in terms of the preparation of graphene, the small size and low yield of graphene prepared by the micromechanical exfoliation method seriously limit its application in devices. As we all know, carbon materials can be gro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
CPCC01P2002/82C01P2004/03
Inventor 秦彦哲
Owner 秦彦哲
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