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Epitaxial wafer of light emitting diode and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as the influence of LED brightness and reverse breakdown voltage, so as to improve brightness and reverse breakdown voltage, avoid stress, and improve Effect of Crystal Quality

Active Publication Date: 2017-06-23
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that the prior art has a great influence on the brightness and reverse breakdown voltage of the LED, an embodiment of the present invention provides an epitaxial wafer of a light emitting diode and a manufacturing method thereof

Method used

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  • Epitaxial wafer of light emitting diode and manufacturing method thereof
  • Epitaxial wafer of light emitting diode and manufacturing method thereof
  • Epitaxial wafer of light emitting diode and manufacturing method thereof

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Embodiment 1

[0027] An embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 1 The epitaxial wafer includes a substrate 1, and a low-temperature gallium nitride layer 2, a high-temperature gallium nitride layer 3, an N-type gallium nitride layer 4, a stress release layer 5, an active layer 6, Electron blocking layer 7 and P-type gallium nitride layer 8 .

[0028] In this example, see figure 2 , the stress release layer 5 includes a first sublayer 51, a second sublayer 52 and a third sublayer 53 stacked in sequence, the first sublayer 51 is a gallium nitride layer doped with silicon, and the second sublayer 52 includes a multilayer The undoped indium gallium nitride layer 52a and the multi-layer undoped gallium nitride layer 52b, the multi-layer undoped indium gallium nitride layer 52a and the multi-layer undoped gallium nitride layer 52b are alternately stacked, the first The third sublayer 53 is a gallium nitride layer doped with indium a...

Embodiment 2

[0039] An embodiment of the present invention provides a method for manufacturing an epitaxial wafer of a light emitting diode, which is suitable for manufacturing the epitaxial wafer provided in Embodiment 1. In this embodiment, Veeco K465i or C4 Metal Organic Chemical Vapor Deposition (English: Metal Organic Chemical Vapor Deposition, abbreviated: MOCVD) equipment is used to realize the manufacture of LED epitaxial wafers. Using high-purity hydrogen (H 2 ) or high-purity nitrogen (N 2 ) or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As nitrogen source, trimethylgallium (TMGa) and triethylgallium (TEGa) as gallium source, trimethylindium (TMIn) as indium source, trimethylaluminum (TMAl) as aluminum source, silane (SiH4) as N-type dopant, magnesium dicene (CP 2 Mg) as a P-type dopant. The pressure of the reaction chamber is controlled at 100-600 torr.

[0040] Specifically, see image 3 , the growth method includes:

[0041] ...

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Abstract

The invention discloses an epitaxial wafer of a light emitting diode and a manufacturing method thereof, and belongs to the semiconductor technology field. The epitaxial wafer comprises a substrate, a low-temperature gallium nitride layer, a high-temperature gallium nitride layer, an N-type gallium nitride layer, a stress releasing layer, an active layer, an electronic blocking layer and a P-type gallium nitride layer. The stress releasing layer comprises a first sublayer, a second sublayer and a third sublayer. The first sublayer is a gallium nitride layer doped with silicon. The second sublayer comprises multiple undoped indium gallium nitride layers and multiple undoped gallium nitride layers. The multiple undoped indium gallium nitride layers and the multiple undoped gallium nitride layers are alternatively stacked and arranged. The active layer comprises multiple indium gallium nitride layers and multiple gallium nitride layers. The multiple indium gallium nitride layers and the multiple gallium nitride layers are alternatively stacked and arranged. The third sublayer is the gallium nitride layer doped with indium and silicon. A doped concentration of the indium in the third sublayer is gradually increased or gradually reduced along a laminating direction of the epitaxial wafer. In the invention, LED brightness and a reverse breakdown voltage are finally increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly, and green new solid-state lighting source, LEDs are rapidly and widely used in traffic lights, automotive interior and exterior lights, urban landscape lighting, and mobile phone backlights. [0003] The epitaxial wafer of the existing LED includes a substrate, and a low-temperature gallium nitride layer, a high-temperature gallium nitride layer, an N-type gallium nitride layer, a stress release layer, an active layer, an electron blocking layer and a P type GaN layer. Wherein, the stress release layer includes a first sublayer, a second sublayer and a third sublayer stacked in sequenc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/12H01L33/14H01L33/00
CPCH01L33/0075H01L33/12H01L33/14H01L33/325
Inventor 姚振从颖胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD
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