Array substrate and manufacturing method therefor

Abstract

Embodiments of the invention disclose an array substrate and a manufacturing method therefor. The array substrate comprises a plurality of first thin film transistors and a plurality of second thin film transistors; the first thin film transistors and the second thin film transistors are formed above a substrate; the active layer of each first thin film transistor is low-temperature polysilicon; the active layer of each second thin film transistor is an oxide semiconductor; the first thin film transistors are positioned in a peripheral circuit region of the array substrate; the second thin film transistors are positioned in a display region of the array substrate; the grid electrodes of the first thin film transistors and the second thin film transistors are positioned on different layers; and the source and drain electrodes of the first thin film transistors and the source and drain electrodes of the second thin film transistors are positioned on the same layer. By adoption of the array substrate and the manufacturing method therefor, the problem of incompatibility of two film layers of two types of thin film transistors when the metal oxide thin film transistors and the low-temperature polysilicon thin film transistors are formed in a display panel at the same time is solved, so that the electrical performance and the stability of the display panel are improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of display technology, and in particular to an array substrate and a manufacturing method. Background technique [0002] The metal oxide thin film transistor uses a metal oxide semiconductor layer as the active layer material of the thin film transistor. Due to its high carrier mobility, low deposition temperature and high transparency, it has become the mainstream display panel driving technology. Low-temperature polysilicon thin-film transistors have high switching speeds, and thin-film circuits can be made thinner and smaller, with lower power consumption and so on. [0003] In the prior art, low-temperature polysilicon thin film transistors are used in the peripheral circuit area, and metal oxide thin film transistors are used in the pixel drive circuit in the display area, which improves the problems of poor device uniformity and leakage current. [0004] However, due to the current manufac...

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides an array substrate and a manufacturing method to solve the problem of incompatibility between the layers of the two types of thin film transistors when the metal oxide thin film transistor and the low-temperature polysilicon thin film transistor are simultaneously formed in the display panel, and improve the performance of the array substrate. Electrical performance and stability of display panels

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