Preparation method of group III nitride substrate

Abstract

The invention discloses a preparation method of a group III nitride substrate. The preparation method comprises the following steps: selecting a silicon carbide substrate as a matrix, at certain vacuum degree, heating a SiC substrate to 1400-1650 DEG C through RF (radio frequency), introducing Ar / H2 mixed gas as a carrier gas in an epitaxy thermal decomposition process, and epitaxially growing multiple graphene layers on a carbon surface or a silicon surface of the SiC substrate; depositing and growing a group III nitride nucleating layer on the surface of multiple graphene layers; growing thick-layer group III nitride on the surface of the group III nitride nucleating layer; stripping the SiC matrix by adopting a mechanical stripping method, and grinding and polishing the surface of a group III nitride slice with the SiC matrix stripped, so as to obtain the group III nitride substrate. Multiple graphene layers which are large in area and high in quality can epitaxially grow on the carbon surface or silicon surface of the SiC substrate, and a high-quality group III nitride nucleating layer grows. The obtained nitride substrate slice is small in stress, low in defect density and high in crystal quality.

Description

technical field [0001] The invention belongs to the technical field of preparation of third-generation semiconductor substrate materials, and relates to a preparation method of a group III nitride substrate, in particular to a preparation method of a group III nitride substrate with low defect density and high crystal quality. Background technique [0002] In recent years, the third-generation semiconductor materials represented by aluminum nitride, gallium nitride and indium nitride have received more and more attention from the industry. As the representative materials of the third-generation semiconductor, nitrides such as aluminum nitride The material has excellent electrical and optical properties, and at the same time has the advantages of wider band gap and direct band gap, and can form a two-dimensional electron gas with high concentration and high mobility, which makes up for the large effective mass and low mobility of wide-bandgap semiconductor electrons. The mate...

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Problems solved by technology

[0005] 1. Graphene prepared by chemical vapor deposition or graphite redox method is mostly discontinuous and of poor quality, and it is difficult to grow a seed layer of high-quality crystal quality on its surface

[0006] 2. It is very difficult to peel off graphene from the substrate, and it is easy to cause graphene wrinkles and introduce impurities

[0007] 3. The process is cumbersome, it must be stripped first, and then transferred

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