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A kind of preparation method of graphene/metal matrix composite film material

A metal matrix composite, graphene film technology, applied in metal material coating process, superimposed layer plating, coating and other directions, can solve problems such as poor dispersion, low graphene density, difficult preparation, etc., and achieve good electrical properties , The preparation process is simple, and the effect of improving the mechanical properties

Inactive Publication Date: 2019-12-03
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low density and poor dispersion of graphene, and the interface reaction will occur in the melt preparation, the preparation of graphene-enhanced metal matrix composite thin film materials is still relatively difficult.

Method used

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  • A kind of preparation method of graphene/metal matrix composite film material
  • A kind of preparation method of graphene/metal matrix composite film material
  • A kind of preparation method of graphene/metal matrix composite film material

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preparation example Construction

[0026] A kind of preparation method of graphene / metal matrix composite film material of the present invention, comprises the following steps:

[0027] (1) Select a conductive substrate, carry out degreasing and pickling to the conductive substrate, remove the organic matter and the oxide layer on the surface of the conductive substrate, and grow graphite with expanded and loose structure on the conductive substrate after cleaning vinyl film layer;

[0028] (2) then described graphene thin film layer is carried out deionized water cleaning, removes the electrolyte ion that is adsorbed on described graphene thin film layer, grows metal layer on described graphene thin film layer again, promptly makes obtained Described graphene / metal matrix composite film material.

[0029] In order to further improve the dispersion uniformity of graphene in the film material, the present invention also includes the step of vacuum annealing or vacuum reflowing the prepared graphene / metal matrix...

Embodiment 1

[0034] A kind of preparation method of graphene / metal matrix composite film material of the present invention, comprises the following steps:

[0035] (1) Firstly, copper foil with a thickness of 200 microns is selected as the conductive substrate, and the surface of the conductive substrate is degreased. The degreasing time is 30s, the degreasing temperature is 40°C, and the degreasing current density is 3ASD (A / dm 2 ), after washing with deionized water, wash with 20% dilute sulfuric acid for 10s, then rinse with deionized water; then use cyclic voltammetry to grow a reduced graphene oxide layer on the copper foil. The solute of the electrodeposition solution is graphene oxide, the concentration is 0.2g / L, the size of the graphene oxide sheet is 1 micron to 5 microns, and the number of layers is 1 to 5 layers; the electrolyte is NaCl, the concentration is 0.1mol / L; Voltammetric scanning voltage is -2.0V to 0V, scanning speed is 0.1V / s, and the number of scanning segments is ...

Embodiment 2

[0038] A kind of preparation method of graphene / metal matrix composite film material of the present invention, comprises the following steps:

[0039] (1) First, select a copper foil with a thickness of 200 microns as the conductive substrate, and degrease the surface of the conductive substrate. The degreasing time is 30s, the degreasing temperature is 40°C, and the degreasing current density is 3ASD (A / dm 2 ), after washing with deionized water, wash with 20% dilute sulfuric acid for 10s, then rinse with deionized water; then use cyclic voltammetry to grow a reduced graphene oxide layer on the copper foil. The solute of the electrodeposition solution is graphene oxide, the concentration is 0.2g / L, the graphene oxide sheet size is 5 microns to 20 microns, and the number of layers is 1 to 10 layers; the electrolyte is Na2HPO 4 , the concentration is 0.1mol / L; the scanning voltage of cyclic voltammetry is -2.0V to 0V, the scanning speed is 0.1V / s, and the number of scanning segme...

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Abstract

The invention discloses a preparation method for a graphene / metal based composite film material. The preparation method comprises the following steps that an electric conduction base is selected and washed, and a graphene thin film layer is grown on the washed electric conduction base; and the graphene thin film layer is washed, a metal layer is then grown on the graphene thin film layer, and then the graphene / metal based composite film material is prepared. The preparation method has the beneficial effects that the process is simple, the reaction condition is mild, and the graphene doped proportion is controllable; and according to the prepared composite film material, on the premise that the electrical property is guaranteed, the good mechanical property and corrosion and oxidation resistance are achieved, growth of intermetallic compounds can be effectively prevented, and the preparation method is suitable for the fields of surface coating, electronic packaging and the like.

Description

technical field [0001] The invention belongs to the technical field of graphene composite thin film materials, in particular to a preparation method of graphene / metal matrix composite thin film materials. Background technique [0002] In 2004, physicists Andre Geim and Konstantin Novoselov of the University of Manchester in the United Kingdom used mechanical exfoliation to separate graphene from graphite and demonstrated that it could be Existence, so the two won the Nobel Prize in Physics in 2010. Graphene has a unique structure and excellent optical, mechanical, thermal and electrical properties. Graphene is a two-dimensional honeycomb crystal formed by the close packing of a single layer of carbon atoms. The bond length of the C-C bond is about 0.142nm. Each carbon atom is closely combined with three adjacent carbon atoms by covalent σ bonds to form a stable Hexagonal structure. Carbon atoms in graphene pass through sp 2 Hybridization into bonds, the remaining one p-o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C28/00
CPCC23C28/32C23C28/34
Inventor 胡安民凌惠琴孙梦龙鞠隆龙
Owner SHANGHAI JIAO TONG UNIV
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