10G miniaturized EML laser heat sink

A laser and heat sink technology, applied in the design field of 10GEML laser heat sink, to achieve the effect of saving high costs, ensuring high frequency characteristics, and high lithography accuracy

Inactive Publication Date: 2017-05-31
DALIAN CANGLONG OPTOELECTRONICS TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention is to solve the problems existing in the existing laser heat sink, replace the existing aluminum nitride heat sink with a silicon substrate, and carry out an optimized structural design on the silicon substrate to ensure all the electrical properties of the laser and improve the optical path. The tolerance of coupling efficiency and electrical performance optimizes the eye diagram, and has the advantages of compact structure, obvious effect, simple process, and low cost.

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  • 10G miniaturized EML laser heat sink
  • 10G miniaturized EML laser heat sink
  • 10G miniaturized EML laser heat sink

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Embodiment Construction

[0027] The specific implementation manner of the present invention will be described below with reference to the accompanying drawings.

[0028] Such as figure 1 , 2 The heat sink of the 10G miniaturized EML laser shown in the figure adopts a silicon substrate with a size of 2.9×2.0×0.8mm. The silicon substrate is provided with a groove 4 for placing the backlight monitoring component, and the size of the groove 4 is 0.6×0.35×0.1 mm, it is located at the rear position of the laser chip. The key point of the design of the groove 4 is to ensure that the center of the backlight monitoring chip placed in the groove 4 can be aligned with the center of the laser chip, and there is a 6-8 between the laser chip and the laser chip. ° declination angle, so that the low-cost front light-connected chip can be directly used to monitor the backlight of the chip, and at the same time, the influence of reflected light on the forward optical path of the laser can be avoided.

[0029] There i...

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Abstract

The invention relates to the field of optical devices, in particular to a design of a 10G miniaturized EML laser heat sink. The invention provides the 10G miniaturized EML laser heat sink, which comprises a silicon substrate, wherein a backlight monitoring assembly placement groove, a V-shaped notch, a bonding pad, a high-frequency transmission line and a thin-film circuit are arranged in / on the silicon substrate; the backlight monitoring assembly placement groove is positioned in a rear position of a laser chip; the V-shaped notch is used for holding a lens, and is positioned in a right ahead position of the laser chip; the bonding pad is used as a preserved bonding pad for gold wire binding; the thin-film circuit is used for regulating the high-frequency performance of the laser chip. The design of the laser heat sink has the advantages that on the basis of guaranteeing the total electric performance of the laser, the existing EML laser heat sink is optimized; a process encapsulation platform is favorably simplified; the attaching mounting work procedure with multiple materials and complicated process is simplified; the design belongs to a heat sink design scheme with the advantages of exquisite and ingenious structure, obvious effect, simple process and low cost.

Description

technical field [0001] The invention relates to the field of optical devices, in particular to the design of a 10G EML laser heat sink. Background technique [0002] 10G miniaturized electro-absorption modulation laser transmitter is an optoelectronic component specially used for long-distance trunk data transmission. It mainly includes laser chip, photodetector, heat sink, isolator, sealed package, optical interface and flexible circuit Wait. At present, there are many aluminum nitride heat sinks used in general 10G electro-absorption lasers on the market, but the accuracy of aluminum nitride heat sinks in lithography is far lower than that of silicon substrates, and it is difficult to make special-shaped grooves on them. As a result, the implementation of optimization schemes such as improvement and simplification of the laser packaging process is limited. Due to its natural silicon crystal structure, the traditional silicon substrate can realize the digging process on t...

Claims

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Application Information

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IPC IPC(8): H01S5/02H01S5/024
CPCH01S5/021H01S5/02469
Inventor 张文臣张彩
Owner DALIAN CANGLONG OPTOELECTRONICS TECH
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