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Method for preparing metal network transparent conductive electrode by low-cost plasma bombardment

A transparent conductive electrode and plasma technology, which is applied in cable/conductor manufacturing, circuits, electrical components, etc., can solve problems such as hidden dangers in safety, low market competitiveness, waste of precious metals, etc., and achieve diversification and small production capacity restrictions , The effect of low input cost

Active Publication Date: 2017-05-31
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its large-scale production or the use of expensive equipment requires huge investment, serious waste of precious metals, and at the same time, large power loss and extremely low market competitiveness; relatively low

Method used

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  • Method for preparing metal network transparent conductive electrode by low-cost plasma bombardment
  • Method for preparing metal network transparent conductive electrode by low-cost plasma bombardment
  • Method for preparing metal network transparent conductive electrode by low-cost plasma bombardment

Examples

Experimental program
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Effect test

Embodiment 1

[0048] like Figure 1-5 As shown, this embodiment provides a low-cost method for preparing a metal network transparent conductive electrode by plasma bombardment. It includes five main steps: one is the selective fixation of the substrate and the removable layer, the other is the deposition of cracking fluid and cracks into a template, the third is the formation of metal network grooves by plasma bombardment, and the fourth is the formation of nano-metal particles. The coating and annealing form a network, and the fifth is UV curing and compaction to control the surface morphology and obtain transparent conductive electrodes.

[0049] The detailed process of each step is as follows:

[0050] (1) Selection and fixation of substrate and removable layer

[0051] (1) The selected substrate material is PET, 5cm×5cm, cleaned with a spray gun, including spraying twice with acetone, twice with ethanol, and three times with deionized water, and then blown dry with nitrogen to keep it...

Embodiment 2

[0070] like Figure 1-5 As shown, the method for preparing a metal network transparent conductive electrode by low-cost plasma bombardment provided in this embodiment includes the following steps:

[0071] The detailed process of each step is as follows:

[0072] (1) Selection and fixation of substrate and removable layer

[0073] (1) The selected substrate material is PET, 5cm×5cm, cleaned with a spray gun, including cleaning twice with acetone, twice with ethanol, and three times with deionized water, and then dried with nitrogen to keep it clean;

[0074] (2) The selected removable layer is photoresist 3, SU-8 negative photoresist, which is evenly sprayed on the substrate, and a Meyer rod 2 with a diameter of 10 mm and a wet film thickness of 15 μm is rolled at a constant speed to form a film. In oven 1, keep warm at 150°C for 6 minutes. Set the power of the ultraviolet lamp 11 to 1000W, and expose at a height of 10 cm vertically above the sample for 10 seconds to obtain...

Embodiment 3

[0092] like Figure 1-5 As shown, the method for preparing a metal network transparent conductive electrode by low-cost plasma bombardment provided in this embodiment includes the following steps:

[0093] The detailed process of each step is as follows:

[0094] (1) Selection and fixation of substrate and removable layer

[0095] (1) The selected substrate material is glass, 5cm×5cm, cleaned with a spray gun, including cleaning twice with acetone, twice with ethanol, and three times with deionized water, and then dried with nitrogen to keep it clean;

[0096] (2) The selected removable layer is photoresist 3, BN303-60 negative photoresist, which is evenly sprayed on the substrate, and the Meyer rod 2 with a diameter of 10 mm and a wet film thickness of 6 μm is rolled at a constant speed to form a film , in oven 1, keep warm at 20°C for 4min, set UV lamp 11, power 100W, and expose at a height of 10cm vertically above the sample for 30s; repeat the above steps 5 times to obta...

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Abstract

The invention discloses a method for preparing a metal network transparent conductive electrode by low-cost plasma bombardment. The method comprises the following steps of (1) coating a substrate with photoresist; (2) fixing the photoresist; (3) manufacturing a cracked template network; (4) performing plasma bombardment on the photoresist to form a network; (5) forming a nanometer metal network; (6) removing the photoresist; and (7) performing adhesive property treatment. The transparent conductive electrode prepared by the method has the advantages of low input, relatively high yield, simple process, low construction cost, and easy realization of reel-to-reel industrial production and the like; and meanwhile, the electrode is relatively high in conductivity, and high in transparency, and can replace or partially replace ITO conductive glass.

Description

technical field [0001] The invention belongs to the technical field of thin film electrodes, and in particular relates to a method for preparing metal network transparent conductive electrodes by low-cost plasma bombardment. Background technique [0002] Transparent conductive electrodes (TCEs), generally speaking, refer to the transmittance of visible light in the wavelength range of 380-800nm ​​is greater than 80%, and the electrode resistivity is lower than 10 -3 Ω·cm film electrode. Because of its excellent light transmittance and good electrical conductivity, it is widely used in optoelectronic devices, such as solar cells, touch screen displays, organic light-emitting diodes (OLEDs), electronic paper, etc. [0003] There are many types of transparent conductive electrodes. According to different conductive materials, they are mainly divided into: oxide semiconductor electrodes (Transparent conductive oxide, TCO), metal thin film metal wire electrodes, conductive polym...

Claims

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Application Information

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IPC IPC(8): H01B13/00B82Y40/00
CPCB82Y40/00H01B13/00
Inventor 高进伟魏巍韩兵史碧波高修俊李松茹冼志科
Owner SOUTH CHINA NORMAL UNIVERSITY
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