Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Tin-based perovskite thin film, preparation method of film and solar cell device of film

A perovskite and thin film technology, which is applied in the field of tin-based perovskite thin films, preparation methods and solar cell devices, can solve the problems of easy oxidation of tin elements and high intrinsic carrier concentration, and achieve improved life and good performance , high efficiency effect

Active Publication Date: 2017-05-24
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
View PDF2 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a preparation method of tin-based perovskite film, which aims to solve the problems of easy oxidation of tin element and high intrinsic carrier concentration in existing perovskite film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tin-based perovskite thin film, preparation method of film and solar cell device of film
  • Tin-based perovskite thin film, preparation method of film and solar cell device of film
  • Tin-based perovskite thin film, preparation method of film and solar cell device of film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] This scheme firstly provides a kind of preparation method of tin-based perovskite film, and this method comprises the following steps:

[0036] Step A: preparing a precursor solution; the precursor solution is obtained by adding perovskite and phosphates into the solution, and the solution is a mixture of one or both of DMF and DMSO; the perovskite The species is tin-based organometallic halide perovskite CH 3 NH 3 SnA x B 3-x and tin-based inorganic perovskite material CsSnA x B 3-x One or more of them, where A, B=Cl, Br or I. The concentration of the perovskite is 0.7-1.5M. The phosphate esters are triphenyl phosphate, and the concentration of the triphenyl phosphate is 0.01-1.0 M. These materials and concentrations enable perovskite films with better properties.

[0037]Phosphate esters are currently mainly used as flame retardant plasticizers for PVC. The main varieties are tricresyl phosphate (TCP), triphenyl phosphate (TPP), diphenyl octyl phosphate (DPOP)...

example 1

[0058] (1) TPPi, SnI 2 and CsI were added to DMF:DMSO (5:1) mixed solvent according to the molar ratio of 0.6:1:1 (SnI 2 concentration of 1M), and the solution was stirred at 70 °C for 12 h.

[0059] (2) Ultrasonic cleaning of ITO in acetone, ITO cleaning solution, deionized water and isopropanol for 10 min, drying and using UV-O 3 Washing machine for 30 min. Deposit PEDOT:PSS on the surface of ITO by spin coating at 3500 rpm for 30 s, N 2 treated in a glove box at 130 °C for 1 h. Among them, ITO (Indium-Tin Oxide) refers to indium tin oxide, that is, indium tin oxide transparent conductive glass

[0060] (3) The perovskite solution configured in (1) was dropped onto the surface of PEDOT:PSS, and spin-coated at 3000 rpm for 30 s to obtain a perovskite film; the film was finally heated on a heating platform at 90 °C for 10 min.

[0061] (4) Deposit the PCBM film on the perovskite film by spin-coating at 1500 rpm for 30 s. last at 10 -4 A 100 nm silver electrode was ther...

example 2

[0068] (1) TPPi, SnI 2 and CsI were added to DMF:DMSO (5:1) mixed solvent according to the molar ratio of 0.6:1:1 (SnI 2 concentration of 1M), and the solution was stirred at 70 °C for 12 h.

[0069] (2) Ti(OBu) 4 , absolute ethanol and glacial acetic acid were mixed in a molar ratio of 1:16:1.5, stirred for 1 h to form a solution A; the molar ratio was 1:4:0.075 distilled water, absolute ethanol and nitric acid were mixed, stirred for 1 h to form a B solution; The absolute ethanol of solution A is twice that of solution B. After solution B was added dropwise to solution A, stirring was continued for 2 h to form a clear and transparent TiO 2 Precursor sol C.

[0070] (3) The FTO was ultrasonically cleaned in acetone, ITO cleaning solution, deionized water and isopropanol for 10 min, and then treated with a plasma cleaner for 3 min after drying. TiO prepared in (2) 2 Precursor sol C was deposited on the surface of FTO by spin coating at 6000 rpm for 60 s, and finally sint...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of perovskite film forming and in particular relates to a tin-based perovskite thin film, a method of the film and a solar cell device of the film. The tin-based perovskite thin film is prepared by the steps of by taking one or a mixed solution of two of DMF (dimethyl formamide) and DMSO (dimethylsulfoxide) as a solvent and taking perovskite and triphenyl phosphate as a solute, performing spin-coating on a solution composed of the solvent and the solute, performing heat treatment, thereby obtaining the product. According to the tin-based perovskite thin film, the method of the film and the solar cell device of the film provided by the scheme, triphenyl phosphate (TPPi) is introduced into the tin-based perovskite solution, the intrinsic carrier concentration of the film is reduced under the condition that a high-quality perovskite film is obtained, the service life of a photon-generated carrier is further prolonged, and a lead-free perovskite solar cell device with high efficiency is obtained. In addition, according to the technical scheme of the invention, a dense and uniform semiconductor perovskite film with low intrinsic carrier can be obtained in short time at low temperature, and the films are used for photoelectric devices so as to obtain excellent performances.

Description

technical field [0001] The invention belongs to the field of perovskite film formation, and in particular relates to a tin-based perovskite film, a preparation method and a solar cell device thereof. Background technique [0002] With the advancement of science and technology, people pay more and more attention to the problem of environmental pollution. Clean energy, especially solar energy, is gaining traction. Perovskite solar cells have attracted the attention of scientists and commercial companies due to their high energy conversion efficiency and the ability to significantly reduce the cost of using solar cells. [0003] With the deepening of research, the efficiency of perovskite solar cells has increased to about 21%, mainly due to the CH 3 NH 3 PB 3 The materials have high visible light absorption efficiency, long exciton lifetime and diffusion length, high ambipolar mobility and low exciton binding energy, and optimization of device structure and process. Howev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/48H01L51/44H01L51/42H01L51/46
CPCH10K85/00H10K30/80H10K30/00Y02E10/549
Inventor 邓先宇王洋洋
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com