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Antiferroelectric high-energy-density ceramic material and preparation method thereof

A ceramic material, antiferroelectric technology, applied in circuits, capacitors, electrical components, etc., can solve the problems of many types of elements, insufficient breakdown field strength, obvious nonlinear characteristics, etc., and achieve high electric field induced polarization. The effect of high strength, high pressure resistance and simple components

Inactive Publication Date: 2017-05-24
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with ferroelectric materials, antiferroelectric materials have the characteristics of high energy storage density and sufficient energy storage and release. The need for further development of new technologies
Most of the related antiferroelectric energy storage ceramic materials reported so far are complex in composition, contain many types of elements, the components are difficult to control, and the application temperature is high (~150°C). Therefore, in-depth research is still needed to finally develop antiferroelectric ceramic materials with high energy storage density and high withstand voltage that can be applied at room temperature and whose components are easy to adjust.
At present, there is no room temperature antiferroelectric high energy storage density PbHfO 3 -PbMg 0.5 W 0.5 o 3 Related reports on base ceramic materials and their preparation methods

Method used

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  • Antiferroelectric high-energy-density ceramic material and preparation method thereof
  • Antiferroelectric high-energy-density ceramic material and preparation method thereof
  • Antiferroelectric high-energy-density ceramic material and preparation method thereof

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preparation example Construction

[0038] In the preparation method of the present invention, MgWO is first synthesized 4 powder, then synthesize PbHfO 3 -PbMg 0.5 W 0.5 o 3 The solid solution ceramic powder is sintered by a two-step method, and finally the antiferroelectric ceramic material is prepared, which specifically includes the following steps:

[0039] Step 1: Using PbO, HfO 2 , MgO and WO 3 Powder as raw material, according to PbO, HfO 2 , MgO and WO 3 The molar ratio of the powder is (1+a): (1-x): 0.5(1+b)x: 0.5x Take each raw material for later use, where a and b are compensation parameters, and a=0.01~0.05, b =0.01~0.05, x=0.01~0.25; 1~5mol% of MgO is in excess to compensate for the volatilization loss of MgO at high temperature, and the excess of PbO is 1~5mol% to compensate for the volatilization loss of PbO in the high temperature sintering process.

[0040] Step 2: Combine MgO and WO 3 Mix to form mixture A; take mixture A, zirconium balls and absolute ethanol respectively, mix them ac...

Embodiment 1

[0051] The preparation method of the antiferroelectric energy storage ceramic material of the embodiment of the present invention comprises the following steps:

[0052] (1) with PbO, HfO 2 , MgO and WO 3 Powder as raw material, according to PbO, HfO 2 , MgO and WO 3 The molar ratio of the powder is (1+a):(1-x):0.5(1+b)x:0.5x. Take each raw material for later use, where a=0.03, b=0.04, x=0.08;

[0053] First, MgWO was synthesized at 1000°C for 10 hours 4 powder; then, take HfO 2 , PbO and MgWO 4 Form the complete ingredients, use the wet chemical ball mill mixing method, ball mill for 12 hours, mix evenly, dry, briquetting, put in a muffle furnace at 850°C for 4 hours and pre-fire to form 0.92PbHfO 3 -0.08PbMg 0.5 W 0.5 o 3 The ceramic powder, as the main crystal phase powder, is reserved.

[0054] (2) smash and grind the ceramic powder obtained in step (1), sieve with a 120-mesh sieve to obtain a finer powder, then carry out secondary ball milling for 12 hours, obta...

Embodiment 2

[0061] The preparation method of the antiferroelectric energy storage ceramic material of the embodiment of the present invention comprises the following steps:

[0062] (1) with PbO, HfO 2 , MgO and WO 3 Powder as raw material, according to PbO, HfO 2 , MgO and WO 3 The molar ratio of the powder is (1+a):(1-x):0.5(1+b)x:0.5x. Take each raw material for later use, where a=0.03, b=0.04, x=0.1;

[0063] First, MgWO was synthesized at 1000°C for 10 hours 4 powder; then, take HfO 2 , PbO and MgWO 4 Form the complete ingredients, use the wet chemical ball mill mixing method, ball mill for 12 hours, mix evenly, dry, briquetting, put in a muffle furnace at 850°C for 4 hours and pre-fire to form 0.9PbHfO 3 -0.1PbMg 0.5 W 0.5 o 3 Ceramic powder.

[0064] (2) smash and grind the ceramic powder obtained in step (1), sieve with a 120-mesh sieve to obtain a finer powder, then carry out secondary ball milling for 12 hours, obtain ceramic powder after drying, and then Add the poly...

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Abstract

The invention relates to an antiferroelectric high-energy-density ceramic material and a preparation method thereof. The general formula of the composition is (1-x)PbHfO[3-x]PbMg0.5W0.5O3, wherein x represents the mol percent of PbMg0.5W0.5O3, and x=0.01-0.25. By adopting a two-step solid-phase sintering process to prepare the ceramic material, the composition is controlled, so that the critical electric field of the antiferroelectric ceramic is obviously lowered, and the withstand voltage strength is enhanced, thereby implementing high-energy-density application in the room temperature environment. The high-energy-density ceramic capacitor dielectric material has the advantages of low sintering temperature, high withstand voltage strength (up to 130 kV / cm) and high energy density (up to 1.39 J / cm<3>), can be used for preparing high-energy-density multilayer ceramic capacitors, and has favorable application prospects. The antiferroelectric high-energy-density ceramic material has the characteristics of simple technique and stable performance, and is suitable for industrial popularization.

Description

[0001] 【Technical field】 [0002] The invention relates to the field of energy storage ceramic dielectric materials, in particular to an antiferroelectric high energy storage ceramic material and a preparation method thereof. [0003] 【Background technique】 [0004] With the development of economy and society, human beings' demand for energy is increasing day by day, so the development and storage of new energy has become a focus of current research. High energy storage density storage capacitors are widely used in modern electronic energy systems, such as pulse power systems, hybrid vehicles, new energy power systems, microelectronic devices and other fields. High energy storage density, high energy storage efficiency and fast storage of electrical materials are the basis of high power and high energy storage density capacitors. Ceramic dielectric materials have the advantages of high mechanical strength, slow aging rate, adjustable dielectric and good temperature adaptabilit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/48C04B35/622C04B41/88H01G4/12
CPCH01G4/1209C04B35/48C04B35/622C04B41/5116C04B41/88C04B2235/656C04B2235/96C04B2235/3206C04B2235/3296C04B2235/3258C04B41/4539C04B41/0072
Inventor 叶作光高攀庄建张楠任巍
Owner XI AN JIAOTONG UNIV
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