Semiconductor-laser narrow pulse driving circuit and working method thereof

Abstract

The invention relates to a semiconductor-laser narrow pulse driving circuit and a working method thereof. The semiconductor-laser narrow pulse driving circuit comprises an external power supply interface circuit, a narrow pulse generating circuit and a MOSFET pulse driving circuit. The external power supply interface circuit provides power for the narrow pulse generating circuit and the MOSFET pulse driving circuit respectively. Through controlling a pulse width and a repetition frequency of a narrow pulse generating circuit trigger signal, a semiconductor laser can acquire a light pulse signal with the continuous adjustable pulse width and the repetition frequency. The trigger signal generated by the narrow pulse generating circuit directly drives a drain electrode switch of a MOSFET driving chip field effect transistor and a grid electrode of the field effect transistor is connected to a stable voltage so that a problem that signal rise time and fall time are too long when a pulse signal is directly used to drive the grid electrode of the field effect transistor can be avoided.

Description

technical field [0001] The invention relates to a semiconductor laser narrow pulse driving circuit and a working method thereof, belonging to the technical field of semiconductor lasers. Background technique [0002] In recent years, the semiconductor laser narrow pulse drive circuit has been widely used in optical communication, single photon detection, fiber amplifier seed source, etc. due to its compact structure, high stability, narrow pulse width, high repetition rate, adjustable pulse width and repetition rate, etc. field. Whether it is in the field of optical communication, single photon detection, or fiber amplifier seed source, the smooth waveform, stable central wavelength, high output power, narrow pulse width and other performances of pulsed lasers all depend on the quality of laser pulses emitted by semiconductor lasers. The optical pulse emitted by the semiconductor laser is directly modulated by the electrical pulse generated by the semiconductor laser drive ...

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Problems solved by technology

Both of the above two patents directly drive the gate of the FET with a narrow pulse signal, but due to the parasitic parameters of the MOSFET, this will increase the rise and fall time of the signal and widen the pulse width of the signal, and by charging the capacitor The way of discharging to obtain high-peak narrow pulse signal needs to provide a very high voltage, which requires adding a pulse shaping circuit module or a booster module to increase the voltage in order to quickly charge and discharge the capacitor, which will increase the complexity of the system; therefore, through The method of the above patents cannot obtain a semiconductor laser drive circuit with a simple, compact and highly integrated overall structure, nor can it achieve optical pulse signal output with a sub-nanosecond pulse width.

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