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Multiferroic composite magnetoelectric film and preparation method thereof

A multiferroic and thin-film technology, applied in liquid chemical plating, metal material coating process, coating, etc., to achieve the effect of low preparation cost, stable performance and simple process

Inactive Publication Date: 2017-04-26
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, there has been no preparation of La by chemical solution method so far. 1-x Re x MnO 3 / (001)Related reports on PMN-PT composite magnetoelectric thin films

Method used

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  • Multiferroic composite magnetoelectric film and preparation method thereof
  • Multiferroic composite magnetoelectric film and preparation method thereof
  • Multiferroic composite magnetoelectric film and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0039] A. Preparation of precursor solution

[0040] Weigh 0.0084mol of lanthanum nitrate, 0.0036mol of strontium acetate and 0.012mol of manganese chloride, add 40mL of glacial acetic acid, heat to reflux to dissolve the solute completely, and obtain a transparent yellow solution; let it stand for 2 days, filter through a 0.22μm microporous Membrane filtration can obtain stable lanthanum strontium manganese oxide (La 0.7 Sr 0.3 MnO 3 ) precursor solution;

[0041] B. Preparation of composite magnetoelectric thin film

[0042] Firstly, the (001) PMN-PT substrate was baked on a hot stage at 400°C for 30 minutes to reduce the stress on its surface. Using a homogenizer, drop the prepared LRMO precursor solution onto the cleaned (001) PMN-PT single crystal substrate rotating at a high speed at a constant speed. The speed of the substrate is first 400rpm for 10s, then 3000rpm for 40s , to obtain a layer of lanthanum strontium manganese oxide gel film; place it in a rapid annea...

Embodiment 2

[0044] A. Preparation of precursor solution

[0045] Weigh 0.006mol of lanthanum nitrate, 0.006mol of strontium acetate and 0.012mol of manganese chloride, add 30mL of glacial acetic acid, heat to reflux to dissolve the solute completely, and obtain a transparent yellow solution; let it stand for 2 days, filter through a 0.22μm microporous Membrane filtration can obtain stable lanthanum strontium manganese oxide (La 0.5 Sr 0.5 MnO 3 ) precursor solution;

[0046] B. Preparation of composite magnetoelectric thin film

[0047] First, the (001) PMN-PT substrate was baked on a hot stage at 400°C for 25 minutes to reduce the stress on its surface. Using a homogenizer, drop the prepared LRMO precursor solution onto the cleaned (001) PMN-PT single crystal substrate rotating at a high speed at a constant speed. The speed of the substrate is first 500rpm for 9s, then 3500rpm for 30s , to obtain a layer of lanthanum strontium manganese oxide gel film; placed in a rapid annealing fu...

Embodiment 3

[0049] A. Preparation of precursor solution

[0050] Weigh 0.0036mol of lanthanum nitrate, 0.0084mol of strontium acetate and 0.012mol of manganese chloride, add 30mL of glacial acetic acid, heat to reflux to dissolve the solute completely, and obtain a transparent yellow solution; let it stand for 2 days, filter it with a 0.22μm microporous Membrane filtration can obtain stable lanthanum strontium manganese oxide (La 0.3 Sr 0.7 MnO 3 ) precursor solution;

[0051] B. Preparation of composite magnetoelectric thin film

[0052] Firstly, the (001) PMN-PT substrate was baked on a hot stage at 400°C for 40 minutes to reduce the stress on its surface. Using a homogenizer, drop the prepared LRMO precursor solution onto the cleaned (001) PMN-PT single crystal substrate rotating at a high speed at a constant speed. The speed of the substrate is first 400rpm for 5s, then 3000rpm for 20s , to obtain a layer of lanthanum strontium manganese oxide gel film; place it in a rapid anneal...

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Abstract

The invention discloses a multiferroic composite magnetoelectric film and a preparation method thereof. The magnetoelectric composite film comprises a (001)PMN-PT substrate and a manganese-lanthanum oxide film (La1-xRexMnO3, Re=Sr, Ca, Ba and the like) deposited on the substrate. The invention belongs to the technical field of films. The method is preparing a manganese-lanthanum oxide epitaxial film on the (001)PMN-PT substrate through a wet chemical method (sol-gel method), and comprises the following steps: preparing a precursor solution, carrying out pre-treatment on the PMN-PT substrate and carrying out deposition and heat treatment on the film on the substrate, and finally obtaining the needed composite magnetoelectric film. The manganese-lanthanum oxide / (001)PMN-PT composite magnetoelectric film disclosed by the invention has ferromagnetic performance, electrical transport performance and colossal magnetoresistance effect, and has a wide application prospect in the information industry and the devices of magneto-resistance sensors, ferromagnetic film devices, spin electronic devices, magnetic memory materials and the like.

Description

[0001] 【Technical field】 [0002] The invention relates to a preparation method of magnetic manganese-lanthanum oxide and PMN-PT composite magnetoelectric thin film, especially refers to the preparation of manganese-lanthanum oxide ferromagnetic thin film on single crystal and ceramic substrate by chemical solution method, which belongs to the preparation technology of magnetic thin film field. [0003] 【Background technique】 [0004] Perovskite-type manganese-lanthanum oxides such as lanthanum strontium manganese oxide (La 1-x Re x MnO 3 , Re=Sr, Ca, Ba, etc.), due to its rich physical properties such as giant magnetoresistance effect and magnetostriction effect, it has great potential application value in magnetic memory devices, magnetic sensor devices, transistors, spin valves, etc. At the same time, this system is a strongly correlated system with highly correlated degrees of freedom of charges, spins, lattices, and orbits. It contains very rich physical content and is ...

Claims

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Application Information

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IPC IPC(8): C23C18/12
CPCC23C18/1216
Inventor 史鹏张静任巍刘明
Owner XI AN JIAOTONG UNIV
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