Self-heating effect evaluation method and self-heating effect evaluation system of LDMOS transistor

Abstract

The invention provides a self-heating effect evaluation method and self-heating effect evaluation system of an LDMOS transistor. In the self-heating effect evaluation system, the LDMOS transistor is adjacent to a temperature sensing device. According to a temperature measuring unit, the temperature of the temperature sensing device can be obtained. The self-heating effect evaluation unit takes the temperature of the temperature sensing device obtained by the temperature measuring unit as the temperature of the LDMOS transistor and can obtain the relation between the leakage current value of the LDMOS transistor and signal voltage and temperature according to the temperature of the LDMOS transistor and the source and leakage current value and signal voltage of the LDMOS transistor. Thus the influence of the self-heating effect on the I-V curve of the LDMOS transistor can be simulated, in the future circuit design, according to the obtained relation between the leakage current value of the LDMOS transistor and the signal voltage and temperature, the self-heating effect can be used as the reference effect which influences the source and drain current values of the LDMOS transistor, and thus the design performance of the LDMOS transistor is more close to actual performance.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a self-heating effect evaluation method and a self-heating effect evaluation system of an LDMOS transistor. Background technique [0002] Compared with common field effect transistors, LDMOS (lateral double-diffused MOSFET) transistors have obvious advantages in terms of device characteristics such as gain, linearity, switching performance, heat dissipation performance, and reduced number of stages, so they are widely used. [0003] LDMOS transistors are high-voltage devices that can be used in display driver ICs or radio frequency devices. Because it is often used under high-voltage conditions, the temperature of LDMOS transistors is relatively high during operation, often reaching above 100 degrees Celsius. Under such high temperatures, the performance of LDMOS transistors will be degraded. Large, so that the drain current decreases, this phenomenon is called the self-heating eff...

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Problems solved by technology

[0004] When designing a semiconductor device, it is necessary to consider the self-heating effect of the LDMOS transistor, that is, it is necessary to find the relationship between the I-V curve of a certain type of LDMOS transistor and the operating temperature of the LDMOS transistor, but the existing technology cannot directly measure the temperature of the LDMOS transistor when the LDMOS transistor is working. temperature, it is difficult to consider the self-heating effect when designing LDMOS transistors, making it difficult for the performance of the designed LDMOS transistors to meet the standards

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