Seeding and shoulder expanding device and technique for single crystal rods and single crystal furnace

Abstract

The invention discloses a seeding and shoulder expanding device and technique for single crystal rods and a single crystal furnace and belongs to the technical field of production of single crystal silicon. The seeding and shoulder expanding device for the single crystal rods comprises a hammer located above a crucible, wherein a conical reflection cover is fixed on the side wall of a connecting end, close to a seed crystal, of the hammer, the cone vertex angle is 150-180 degrees, and the conical surface faces molten silicon; the single crystal furnace comprises the seeding and shoulder expanding device for the single crystal rods; the seeding and shoulder expanding technique for the single crystal rods is performed by use of the single crystal furnace and comprises steps as follows: seeding: the rotating speed of the crucible is 8-12 rpm, the rotating speed of the seed crystal is 10-13 rpm, the seeding length is 120-200 mm, and the diameter of fine crystals is 4-8 mm; shoulder expanding: the rotating speed of the crucible is 10-12 rpm, the rotating speed of the seed crystal is 10-13 rpm, and the shoulder expanding pulling speed is 0.5-0.8 mm / min. The seeding and shoulder expanding success rate can be greatly increased, and the seeding and shoulder expanding time can be shortened.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon manufacturing, in particular to a single crystal rod seeding and shouldering device, a single crystal furnace and a process method thereof. Background technique [0002] In the single crystal ingot pulling process, seeding and shouldering are the key factors for the growth of single crystals. If dislocations cannot be completely eliminated during the seeding stage, the single crystal will break when the shoulders or the initial stage of equal diameter. Fast and efficient seeding and shouldering have become the main research issues of various single crystal manufacturers, especially for large-size single crystal rods. Seeding and shouldering are more difficult, so suitable seeding and shouldering processes are particularly important. [0003] The current seeding and shouldering device only controls the liquid surface temperature through the temperature of the heater, and there will ...

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Problems solved by technology

[0003] The current seeding and shouldering device only controls the liquid surface temperature through the temperature of the heater, and there will inevitably be temperature delays and oscillations, which cannot guarantee a stable temperature change, so that the success rate of seeding and shouldering cannot be effectively guaranteed. ;Due to the small diameter of the small diameter, the scattering of the seed crystal for drawing large-sized crystal rods (above 12 inches) is far from satisfactory, and it needs a second shouldering to complete, which greatly increases the time for seeding and shouldering; the current seeding Most of the crystal and shouldering processes use setting process parameters, controlling temperature compensation value to adjust the temperature of the silicon liquid surface, controlling the diameter of the small diameter, and the speed of shouldering; large-sized single crystal ingots also use secondary shouldering method, both will greatly increase the seeding and shouldering time

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