Thin film getter activating in low temperature of uncooled focal plane detector and preparation method thereof
A technology of focal plane detectors and getters, which is applied in the direction of electrical components, semiconductor devices, ion implantation plating, etc., can solve the problems of not being able to meet the requirements of small-sized packaging forms and large volumes of getters, and achieve easy mass production Production, reduce production costs, enhance the effect of adhesion
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Embodiment 1
[0015] Embodiment 1: An uncooled focal plane detector low temperature activated thin film getter and its preparation method, the getter includes an adjustment layer and a gas absorption layer, the adjustment layer is deposited on the window of the uncooled focal plane detector, and the gas absorption The layer is deposited on the adjustment layer, the adjustment layer is Ti metal, and the absorption layer is a multi-element alloy formed by Zr, Co and Y materials, wherein the content of Zr is 70wt%, the content of Co is 20wt%, and the content of Y is 10wt%. A dense transition layer is formed between the adjustment layer and the window, the thickness of the transition layer is 20 nm, the thickness of the adjustment layer is 1 μm, and the thickness of the absorption layer is 2 μm.
[0016] The film getter is prepared through the following steps:
[0017] 1) The detector window is cleaned by ultrasonic waves with three kinds of cleaning solutions including toluene, acetone and abs...
Embodiment 2
[0024] Embodiment 2: An uncooled focal plane detector low temperature activated thin film getter and its preparation method, the getter includes an adjustment layer and a gas absorption layer, the adjustment layer is deposited on the window of the uncooled focal plane detector, and the gas absorption The layer is deposited on the adjustment layer, the adjustment layer is Zr metal, and the absorption layer is a multi-element alloy formed by Zr, Co and La materials, wherein the Zr content is 80 wt%, the Co content is 10 wt%, and the La content is 10 wt%. A dense transition layer is formed between the adjustment layer and the window, the thickness of the transition layer is 20 nm, the thickness of the adjustment layer is 1 μm, and the thickness of the absorption layer is 2 μm.
[0025] The film getter is prepared through the following steps:
[0026] 1) The detector window is cleaned by ultrasonic waves with three kinds of cleaning solutions including toluene, acetone and absolut...
Embodiment 3
[0033] Embodiment 3: An uncooled focal plane detector low temperature activated thin film getter and its preparation method, the getter includes an adjustment layer and a gas absorption layer, the adjustment layer is deposited on the window of the uncooled focal plane detector, and the gas absorption The adjustment layer is deposited on the adjustment layer, the adjustment layer is AL metal, and the absorption layer is a multi-element alloy formed by Zr, Co, Y and La materials, in which the content of Al is 70 wt%, the content of Co is 25 wt%, and the content of Y is 2 wt%. , La content is 3%. A dense transition layer is formed between the adjustment layer and the window, the thickness of the transition layer is 50 nm, the thickness of the adjustment layer is 2 μm, and the thickness of the absorption layer is 5 μm.
[0034] The film getter is prepared through the following steps:
[0035] 1) The detector window is cleaned by ultrasonic waves with three kinds of cleaning solut...
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