Processing method of etching black phosphorus two-dimensional material body using oxygen plasma

Abstract

Provided is a processing method of etching a black phosphorus two-dimensional material member using an oxygen plasma. The method comprises the following steps: etching a multi-layer black phosphorus two-dimensional material member using an oxygen plasma, wherein the multi-layer black phosphorus two-dimensional material member is etched to be a thin black phosphorus two-dimensional material member having a target number of layers; and forming a phosphorus oxide protection layer on a surface of the thin black phosphorus two-dimensional material member. The present invention can realize accurate control of the layer number of a black phosphorus two-dimensional material member and suppress degradation of the black phosphorus two-dimensional material in the ambient atmosphere, thus significantly increasing the effective existing duration of the black phosphorus two-dimensional material in room temperature and ambient atmosphere, and preventing the black phosphorus two-dimensional material from contamination in further processing. The method further comprises a passivation processing step to further increase the lifespan of the oxidization-etched black phosphorus two-dimensional material via adding a second protection layer.

Description

technical field [0001] The invention relates to the technical field of molecular materials, in particular to a processing method of using oxygen plasma to etch a black phosphorus two-dimensional material body. Background technique [0002] At present, two-dimensional materials such as graphene (graphene), transition metal dichalcogenides (TMD), etc., are regarded as the basic materials of semiconductor devices that may replace silicon (Si) in the future due to their excellent electrical and optical properties. However, graphene and transition metal dichalcogenides have their own shortcomings in the application of semiconductor industry. [0003] As a semi-metallic material, graphene has extremely high carrier mobility, but due to the lack of the core bandgap structure of semiconductor materials, it is difficult to be used as a material for semiconductor transistors, which limits its application in the semiconductor field. application value. [0004] Transition metal dichal...

AI Technical Summary

Problems solved by technology

Fast decay time greatly reduces the application prospects of black phosphorus 2D material body

[0008] At the same time, the instability of black phosphorus materials also caused difficulties in its post-protection treatment process.

Fast decay time makes it difficult to complete protection treatment in effective time

At the same time, its active chemical properties also make the black phosphorus two-dimensional material body easy to react with the protective layer material, resulting in unsatisfactory protective effect, or even unable to play a practical protective role.

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