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Production method of boron doped carbon quantum dots

A technology of carbon quantum dots and boron doping, which is applied in the field of preparation of boron doped carbon quantum dots, can solve the problems of complex preparation process and high price, and achieve the effects of regular material structure, simple source and simple process

Inactive Publication Date: 2017-02-01
CHANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method for preparing boron-doped carbon quantum dots in order to overcome the deficiencies in the prior art such as complex preparation process and high price

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] According to the amount of 1.5 mmol sodium tetramethyl borate per gram of commercially available magnesium aluminum hydrotalcite, the hydrotalcite passing through a 50 mesh sieve is added to the sodium tetramethyl borate solution with a concentration of 1% by mass percentage, and placed in a constant temperature water bath at 70 ° C. Stir in medium for 6 hours, age for 24 hours, then separate solid from liquid, wash the precipitate 3 times with deionized water, and dry to obtain sodium tetramethylborate modified hydrotalcite; put the obtained sodium tetramethylborate modified hydrotalcite into a vacuum tube furnace, heated to 600°C under vacuum conditions, vacuum calcined for 4 hours, and then cooled to room temperature; the calcined powder was added to a hydrochloric acid solution with a concentration of 40% by mass, and each gram of powder corresponds to 15 milliliters of hydrochloric acid solution , stirred for 4 hours under the protection of nitrogen, and after the h...

Embodiment 2

[0020] According to the amount of 1 mmol of sodium tetramethylborate per gram of commercially available zinc-aluminum hydrotalcite, the hydrotalcite passing through a 20-mesh sieve is added to a sodium tetramethylborate solution with a mass percentage concentration of 0.1%, and placed in a constant temperature water bath at 60°C Stir for 5 hours, age for 12 hours, then separate solid from liquid, wash the precipitate twice with deionized water, and dry to obtain sodium tetramethylborate modified hydrotalcite; put the obtained sodium tetramethylborate modified hydrotalcite into In a vacuum tube furnace, heat to 400°C under vacuum conditions, vacuum calcined for 2 hours, and then cool to room temperature; add the calcined powder to 20% hydrochloric acid solution by mass percentage, and each gram of powder corresponds to 10 milliliters of hydrochloric acid solution. Stir for 3 hours under the protection of nitrogen, wait until the hydrotalcite sheets are completely dissolved, and ...

Embodiment 3

[0022] Firstly, the magnesium-aluminum hydrotalcite was synthesized according to the literature (hydrothermal synthesis of magnesium-aluminum hydrotalcite, Applied Chemistry, 2001, 18, 70-72); the hydrotalcite was passed through a 40-mesh sieve for later use.

[0023] According to the amount of 1 mmol of sodium tetramethyl borate per gram of hydrotalcite, hydrotalcite passed through a 50-mesh sieve was added to a sodium tetramethyl borate solution with a mass percent concentration of 0.5%, stirred in a constant temperature water bath at 70°C for 6 hours, and aged 24h, then solid-liquid separation, wash the precipitate 3 times with deionized water, and dry to obtain the hydrotalcite modified by sodium tetramethylborate; put the obtained sodium tetramethylborate modified hydrotalcite into the vacuum tube furnace , heated to 500°C under vacuum, calcined in vacuum for 4 hours, and then cooled to room temperature; the calcined powder was added to a hydrochloric acid solution with a ...

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Abstract

The invention discloses a production method of boron doped carbon quantum dots. The production method sequentially comprises the following steps: adding hydrotalcite which is sieved by a 20-50 mesh sieve to a sodium tetramethylborate solution with the mass percentage concentration of 0.1-1% according to a ratio of sodium tetramethylborate to hydrotalcite of 1-1.5 mol:1 g, stirring hydrotalcite and the sodium tetramethylborate solution in 60-70 DEG C constant temperature water bath for 5-6 h, ageing the obtained solution for 12-24 h, carrying out solid-liquid separation, washing the above obtained precipitate with deionized water 2-3 times, and drying the washed precipitate to obtain sodium tetramethylborate modified hydrotalcite; putting the sodium tetramethylborate modified hydrotalcite in a vacuum tubular furnace, heating the sodium tetramethylborate modified hydrotalcite under a vacuum condition to 400-600 DEG C, carrying out vacuum calcining for 2-4 h, and cooling the obtained calcined powder to room temperature; and adding the calcined powder to a hydrochloric acid solution with the mass percentage concentration of 20-40% according to ratio of 10-15 mL:1 g, stirring the calcined powder and the hydrochloric acid solution for 3-4 h until hydrotalcite sheets are completely dissolved, and carrying out high speed centrifuge in order to obtain the boron doped carbon quantum dots. The method has the advantages of simple materials and mild conditions.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, in particular to a method for preparing boron-doped carbon quantum dots. Background technique [0002] Quantum dots are semiconductor nanostructures that trap excitons in three spatial directions. Such constraints can be attributed to electrostatic potentials (generated by external electrodes, doping, strain, impurities), interfaces of two different semiconductor materials (e.g. in self-assembled quantum dots), semiconductor surfaces (e.g. semiconductor nanocrystals ), or a combination of the above three. Quantum dots have separate quantized energy spectra. The corresponding wave function is spatially located in the quantum dot, but extends over several lattice periods. A quantum dot has a small number (1-100) of an integer number of electrons, holes or electron-hole pairs, that is, the charge it carries is an integer multiple of the elementary charge. [0003] Carbon quantum...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/15C09K11/65
CPCC09K11/65C01P2004/80
Inventor 侯仔尧陈毅忠
Owner CHANGZHOU UNIV
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