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Preparation method of silicon dioxide dielectric film

A dielectric film, silicon dioxide technology, used in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of inability to meet the size of the microelectronic integrated circuit process, and achieve high gap filling performance and process stability. , Overcome the effect of insufficient filling

Active Publication Date: 2019-10-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the traditional CVD process can no longer meet the needs of microelectronic integrated circuit technology with increasingly shrinking dimensions.

Method used

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  • Preparation method of silicon dioxide dielectric film
  • Preparation method of silicon dioxide dielectric film
  • Preparation method of silicon dioxide dielectric film

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Embodiment Construction

[0028] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0029] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0030] In order to thoroughly understand the present invention, detailed steps and detailed structures will be provided in the following description, so as to explain the technical solution proposed by the present invention. Prefer...

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Abstract

The invention provides a method for preparing silicon dioxide dielectric films. The method for preparing the silicon dioxide dielectric films sequentially includes steps of carrying out solution filling on wafers; transforming phases; carrying out hydrolysis; carrying out final treatment. The step for transforming the phases is carried in phase transformation solution. The method for preparing the silicon dioxide dielectric films has the advantages that the flowability of coating solution is sufficiently utilized, and accordingly the method is high in gap filling performance and technological stability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a silicon dioxide dielectric film. Background technique [0002] In the field of semiconductor devices, chemical vapor deposition (CVD) processes are commonly used to form oxides such as front-end shallow trench isolation (FEOL STI) dielectrics, interlayer dielectric (ILD) dielectrics, and back-end-of-line (BEOL) interlayer dielectrics. silicon thin film. Chemical vapor deposition uses various energy sources such as heating, plasma excitation or light radiation to make chemical substances in the gaseous state or vapor state form solid deposits through chemical reactions in the gas phase or gas-solid interface in the reactor by means of chemical reactions, and Volatile by-products exit the interface surface. [0003] The size of current semiconductor devices continues to shrink, and the traditional CVD process encounters bottlenecks in the performan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/762
CPCH01L21/02164H01L21/02282H01L21/76224
Inventor 刘达陈武佳
Owner SEMICON MFG INT (SHANGHAI) CORP
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