An organic light emitting display device and its manufacturing method

A light-emitting display, organic technology, applied in the manufacture of organic light-emitting display devices, the field of organic light-emitting display devices, can solve the problem of not being able to meet the electrical properties at the same time, and achieve the effect of rapid opening and closing

Active Publication Date: 2019-03-15
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the problem in the prior art that the subthreshold swings of the IdVg curves of the two thin film field effect transistors of the active matrix organic light emitting diode are almost the same and cannot meet the electrical requirements of each at the same time, the present invention proposes an organic light emitting display device and its manufacturing method

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  • An organic light emitting display device and its manufacturing method
  • An organic light emitting display device and its manufacturing method
  • An organic light emitting display device and its manufacturing method

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Effect test

Embodiment 1

[0041] Figure 4 A schematic cross-sectional structure diagram of an organic light emitting display device according to an embodiment of the invention is shown. Such as Figure 4 As shown, the organic light emitting display device of this embodiment includes a switching thin film field effect transistor T1, a driving thin film field effect transistor T2, and a storage capacitor respectively connected to the switching thin film field effect transistor T1 and the driving thin film field effect transistor T2.

[0042] Specifically, the switching thin film field effect transistor T1 has a first active layer 9 for reducing the subthreshold swing of the transfer characteristic curve of the switching thin film field effect transistor T1. In addition, the driving thin film field effect transistor T2 has a second active layer 10 for increasing the sub-threshold swing of the transfer characteristic curve of the driving thin film field effect transistor T2.

[0043] The first active layer 9 c...

Embodiment 2

[0046] The organic light emitting display device of this embodiment includes a switching thin film field effect transistor T1, a driving thin film field effect transistor T2, and storage capacitors respectively connected to the switching thin film field effect transistor T1 and the driving thin film field effect transistor T2.

[0047] Specifically, the switching thin film field effect transistor T1 has a first active layer 9 for reducing the subthreshold swing of the transfer characteristic curve of the switching thin film field effect transistor T1. In addition, the driving thin film field effect transistor T2 has a second active layer 10 for increasing the sub-threshold swing of the transfer characteristic curve of the driving thin film field effect transistor T2.

[0048] Compared with the first embodiment, the oxygen content of the second active layer 10 of the organic light emitting display device of this embodiment is higher than the oxygen content of the first active layer 9...

Embodiment 3

[0051] The organic light emitting display device of this embodiment includes a switching thin film field effect transistor T1, a driving thin film field effect transistor T2, and storage capacitors respectively connected to the switching thin film field effect transistor T1 and the driving thin film field effect transistor T2.

[0052] Specifically, the switching thin film field effect transistor T1 has a first active layer 9 for reducing the subthreshold swing of the transfer characteristic curve of the switching thin film field effect transistor T1. In addition, the driving thin film field effect transistor T2 has a second active layer 10 for increasing the sub-threshold swing of the transfer characteristic curve of the driving thin film field effect transistor T2. The oxygen content of the second active layer 10 is higher than the oxygen content of the first active layer 9.

[0053] Compared with the second embodiment, the first active layer 9 and the second active layer 10 of t...

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Abstract

The invention discloses an organic light-emitting display device and a manufacturing method thereof. The organic light-emitting display device includes a switch thin film field effect transistor, a drive thin film field effect transistor, and a storage capacitor connected to the switch thin film field effect transistor and the drive thin film field effect transistor respectively. The switching thin film field effect transistor has a first active layer for reducing a subthreshold swing of a transfer characteristic curve of the switching thin film field effect transistor. The driving thin film field effect transistor has a second active layer for increasing the subthreshold swing of the transfer characteristic curve of the driving thin film field effect transistor. The invention can simultaneously realize the fast switching of the switch thin film field effect transistor and the slow adjustment of the gray scale of the OLED by driving the thin film field effect transistor.

Description

Technical field [0001] The present invention relates to the field of organic light emitting display technology, in particular to an organic light emitting display device, and also to a manufacturing method of the organic light emitting display device. Background technique [0002] Thin film field effect transistors based on semiconductor oxides are a hot spot in the display field in the future, and have been extensively researched and developed in recent years. The most basic structure of an active matrix organic light emitting diode (AMOLED) based on a thin film field effect transistor (TFT) is a 2T1C structure. Such as figure 1 As shown, the 2T1C structure consists of two thin film field effect transistors and a storage capacitor Cst between them. [0003] The mobility of the amorphous indium gallium zinc oxide (a-IGZO) film as the active channel layer can be as high as 80 cm 2 / Vs(The mobility of amorphous silicon is only 0.5~0.8cm 2 / Vs). In addition, the process of the amorp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/32H01L51/56H01L21/77
CPCH01L21/77H10K59/88H10K59/00H10K71/00H01L29/66969H01L27/1225H01L29/78696H01L29/7869H01L27/1255H10K59/1213
Inventor 石龙强
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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