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Method for preparing semiconductor photocatalyst ZnGa2O4 by solvothermal method and semiconductor photocatalyst ZnGa2O4

A technology of photocatalyst and solvothermal method, which is applied in chemical instruments and methods, physical/chemical process catalysts, chemical/physical processes, etc., can solve the problems of difficult product purification, complex process, and product performance impact. Uniformity, simple preparation process and low cost

Inactive Publication Date: 2017-01-04
SHAANXI UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, the pros and cons of photocatalyst performance play a vital role in the development of photocatalytic technology, ZnGa 2 o 4 The synthesis of materials mainly focuses on sol-gel method, high-temperature calcination method and vapor phase deposition method. Most of these methods are synthesized under high temperature conditions exceeding 1000°C. The process is complicated, the equipment cost is high, and expensive catalysts are used. Auxiliary and special equipment, the purification of the synthesized product is difficult and has an impact on product performance

Method used

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  • Method for preparing semiconductor photocatalyst ZnGa2O4 by solvothermal method and semiconductor photocatalyst ZnGa2O4

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preparation example Construction

[0022] A ZnGa 2 o 4 The preparation method of semiconductor photocatalyst comprises the following steps:

[0023] Step A, add 30-40ml of deionized water to the polytetrafluoroethylene liner, and add 1.5-2.5mmol of gallium chloride (GaCl 3 ) and 1.5-2.5mmol ethylenediaminetetraacetic acid (EDTA), magnetically stirred for 5min; after dissolving, slowly add 11-13mmol sodium hydroxide (NaOH), when the pH value of the solution was 6, the solution changed from colorless to Milky white; continue to stir for 10 minutes, then seal the polytetrafluoroethylene liner into a stainless steel mold, start heating from room temperature under airtight conditions and heat the reaction at 150-200°C for 7-10 hours; naturally cool to room temperature after the reaction, and pass the product through distilled water , washed with absolute ethanol, dried in vacuum at 60°C for 4-6h to obtain a white powder; then put into a tube furnace, and calcined at 600-900°C for 1-3h in an air atmosphere to obtai...

Embodiment 1

[0030] A semiconductor photocatalyst ZnGa 2 o 4 The preparation method comprises the following steps:

[0031] Step A, add 36ml of deionized water to the polytetrafluoroethylene liner, add 2mmol of gallium chloride (GaCl 3 ) and 2mmol ethylenediaminetetraacetic acid (EDTA), magnetically stirred for 5min; after dissolving, slowly added 12.5mmol of sodium hydroxide (NaOH), the solution changed from colorless to milky white; continued to stir for 10min, and then put the polytetrafluoroethylene The liner is sealed into a stainless steel mold, heated from room temperature under airtight conditions and heated at 160°C for 8 hours; after the reaction, it is naturally cooled to room temperature, the product is washed with distilled water and absolute ethanol, and dried in vacuum at 60°C for 4-6 hours to obtain a white powder; Then put it into a tube furnace, and calcined at 700°C for 2h in the air atmosphere to obtain gallium oxide (Ga 2 o 3 )White powder;

[0032] Step B, add 34...

Embodiment 2

[0035] Change the amount of polyethylene glycol-200 (PEG-200) into 0.0ml in Step B in Example 1, and other conditions remain unchanged, and the resulting product is ZnGa 2 o 4 , compared with Example 1, the product has inhomogeneous size.

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Abstract

The invention relates to a method for preparing semiconductor photocatalyst ZnGa2O4 by a solvothermal method and the semiconductor photocatalyst ZnGa2O4. The method for preparing the semiconductor photocatalyst ZnGa2O4 by the solvothermal method includes: preparing homogeneous gallium oxide, dissolving the gallium oxide, hexadecyl trimethyl ammonium bromide, zinc carbonate and sodium hydroxide into a mixed solution of water and polyethylene glycol 200 according to a specific stoichiometric ratio prior to solvothermal treatment, and subjecting a product to vacuum drying so as to obtain the semiconductor photocatalyst ZnGa2O4. The semiconductor photocatalyst ZnGa2O4 demonstrates excellent photocatalytic performance for organic dye. The method for preparing the semiconductor photocatalyst ZnGa2O4 by the solvothermal method is available to raw materials, simple in preparation technology and high in repeatability and requires no later-period thermal treatment.

Description

[0001] 【Technical field】 [0002] The invention relates to the technical field of photocatalytic degradation materials, in particular to a semiconductor photocatalyst ZnGa 2 o 4 The preparation method and use. [0003] 【Background technique】 [0004] Since the beginning of the 20th century, human industrial civilization has developed rapidly, and the resulting energy crisis and environmental pollution have become serious problems to be solved urgently. It is becoming more and more urgent to find clean, efficient and sustainable green energy. Research on semiconductor photocatalysis technology around solar energy utilization has also received more and more attention. As a new type of d containing P-block ions 10 type structure semiconductor material ZnGa 2 o 4 , is not only widely used in conductive materials, photosensitive materials and other fields, but also has a special energy band structure, which determines that its basic research is mainly concentrated in the field ...

Claims

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Application Information

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IPC IPC(8): B01J23/08C01G15/00C02F1/32C02F101/30
CPCC01G15/00C02F1/32B01J23/08C02F2101/308C02F2305/10B01J35/39
Inventor 刘淑玲韩乐芳仝建波程芳玲
Owner SHAANXI UNIV OF SCI & TECH
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