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Method for batch detection of semiconductor devices by use of graphene probes

A batch testing, semiconductor technology, applied in the direction of single semiconductor device testing, instruments, measuring electricity, etc., can solve problems such as inapplicability

Active Publication Date: 2016-12-21
YANTAI TAIXIN ELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this scheme is not applicable in some occasions that require high precision

Method used

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  • Method for batch detection of semiconductor devices by use of graphene probes
  • Method for batch detection of semiconductor devices by use of graphene probes
  • Method for batch detection of semiconductor devices by use of graphene probes

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Embodiment Construction

[0047] Such as figure 2 As shown, the detection system of the present invention based on having graphene probes for batch detection of semiconductor devices includes: semiconductor device drive unit, touch pressure probe horizontal drive unit, touch pressure probe vertical drive unit, electrical detection unit and pressure detection unit, the semiconductor device drive unit, the touch probe horizontal drive unit and the touch probe vertical drive unit are connected in series by the drive signal line and driven sequentially, that is, the driving completion signal of the semiconductor device drive unit is used as The drive start signal of the touch pressure probe horizontal drive unit, the drive completion signal of the touch pressure probe horizontal drive unit is used as the drive start signal of the touch pressure probe vertical drive unit, and the pressure detection unit The driving completion signal of the vertical driving unit of the contact pressure probe is used as the ...

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Abstract

The invention provides a method for batch detection of semiconductor devices by use of graphene probes, for the purposes of realizing high-precision semiconductor device detection which does not require arrangement of such auxiliary structures as pseudo gate electrodes and the like at a low cost and taking automatic processing of the pressure signal level of contact probes in a single processing period into consideration. The method comprises the following steps: 1, driving semiconductor devices to be detected in batch on a streamline to be put in place; 2, arranging the contact probes with the graphene probes, and driving the contact probes to reach a to-be-detected state; 3, detecting pressure signals output by each contact probe of the semiconductor devices to be detected; and 4, according to the pressure signals, detecting electrical output signals of the semiconductor devices to be detected.

Description

technical field [0001] The invention relates to the technical field of semiconductor device detection, and more particularly, relates to a method for batch detection of semiconductor devices using graphene probes. Background technique [0002] With the rapid development of semiconductor device manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor device wafers are developing towards higher component density and high integration. become thinner and shorter than ever. Therefore, the patterning accuracy for forming the gate is higher. In order to ensure the flatness of the surface, when forming the gate electrodes, it is preferable to form dummy gate electrodes so that the distribution of the gate electrodes is uniform. It is better to distribute dummy local interconnects when arranging via holes and local interconnect grooves, and such dummy structure regions are usually d...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 刘颖
Owner YANTAI TAIXIN ELECTRONICS TECH CO LTD
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