Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method for light emitting diode by taking carbon quantum dots as light emitting layer

A technology of light-emitting diodes and carbon quantum dots, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low toxicity, photostability and chemical stability, narrow emission spectrum of semiconductor quantum dots, narrow visible spectrum, etc.

Inactive Publication Date: 2016-12-14
TAIYUAN UNIV OF TECH
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] As the matrix luminescent material of QD-LEDs, quantum dots are a kind of nanomaterials ≤ 10nm. In semiconductor devices, quantum dots are used as light-emitting layers, and organic materials are used as electron-transporting layers and hole-transporting layers. Experiments have proved that they have good luminescent properties; Due to the narrow emission spectrum of semiconductor quantum dots, the semiconductor quantum dot light-emitting devices produced have a narrow visible spectrum. Semiconductor quantum dots contain cadmium and other toxic heavy metals, which limits the scope of application.
[0004] Carbon quantum dots (CQDs) are carbon nanomaterials with low toxicity, high photostability and chemical stability, and have broad application prospects in light-emitting devices, but there are still many technical drawbacks in the preparation process. still under scientific research

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for light emitting diode by taking carbon quantum dots as light emitting layer
  • Preparation method for light emitting diode by taking carbon quantum dots as light emitting layer
  • Preparation method for light emitting diode by taking carbon quantum dots as light emitting layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0092] The present invention will be further described below in conjunction with accompanying drawing:

[0093] figure 1 As shown in the figure, the state diagram of carbon quantum dot solution is prepared for hydrothermal synthesis. The position of each part must be correct, the proportion should be proportioned, and the operation should be performed in sequence.

[0094] Quantities of the chemical substances used in the preparation are determined according to a preset range, with grams, milliliters, and millimeters as measurement units.

[0095] The preparation of carbon quantum dots by hydrothermal synthesis is carried out in a reactor and completed under heating;

[0096] The reaction solution 9 is placed in the polytetrafluoroethylene container 8, and the container cover 12 is sealed; then placed in the reaction kettle 7, and sealed by the still cover 11, then placed on the workbench 13 in the heating furnace 1, heated The upper part of the furnace 1 is the furnace cove...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method for a light emitting diode by taking carbon quantum dots as a light emitting layer. For overcoming the shortcomings of the used material, structural characteristics and light emitting property of the light emitting diode, the carbon quantum dots are prepared firstly; then the carbon quantum dots are used as the light emitting layer and conductive glass is used as a base layer; next, a hole transport layer and the light emitting layer are spin coated; and an electron transfer layer, an electron injection layer and a negative electrode layer are evaporated to prepare the light emitting diode; the prepared light emitting diode adopts a seven-layer structure; the carbon quantum dot light emitting layer is excellent in the light emitting property, and the luminance can achieve 70cd / m<2>; the preparation method is advanced in technology and accurate and detailed in data; a continuous technological process can be formed from the preparation of the light emitting material to the preparation of the light emitting diode; and therefore, the preparation method is an advanced preparation method for the light emitting diode by taking the carbon quantum dots as the light emitting layer.

Description

technical field [0001] The invention relates to a preparation method of a light-emitting diode using carbon quantum dots as a light-emitting layer, and belongs to the technical field of light-emitting materials and device preparation and application. Background technique [0002] Quantum dot electroluminescent diode QD-LEDs is a light-emitting diode based on quantum dot electroluminescence. It is a light-emitting device that combines inorganic nano-quantum dots with organic materials. Quantum dots are the matrix material for QD-LEDs to emit light. QD-LEDs have many advantages compared with organic electroluminescent devices OLED: the luminous color of QD-LEDs can be adjusted by controlling the size of quantum dots, and has high color saturation; the luminescent material of QD-LEDs is an inorganic quantum dot material, which has High resistance to water and oxygen, can maintain the stability of performance and structure, and has low packaging requirements; QD-LEDs can produce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/34
CPCH01L33/005H01L33/0054H01L33/34
Inventor 杨永珍张峰刘旭光苗艳勤丁远飞王华
Owner TAIYUAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products