Oxidized grapheme quantum dot humidity sensor and preparation method thereof

Abstract

The invention provides an oxidized grapheme quantum dot humidity sensor and a preparation method thereof. The sensor comprises a silicone substrate, a silicon dioxide layer, a first electrode, a second electrode, a poly diallyldimethylammonium chloride thin film and an oxidized grapheme quantum dot thin film. The preparation method includes the following steps that 1, the silicon dioxide layer is formed on the surface of the silicone substrate, the first electrode and the second electrode are formed on the surface of the silicon dioxide layer, and an electrode substrate is obtained; 2, the poly diallyldimethylammonium chloride thin film is electrostatically adsorbed on the portion between the first electrode and the second surface and on the surface of the first electrode and the surface of the second electrode; 3, the oxidized grapheme quantum dot thin film is electrostatically adsorbed on the surface of the poly diallyldimethylammonium chloride thin film. The humidity sensor has extremely high response speed, and is resistant to high humidity corrosion and high in anti-electromagnetic-interference capacity.

Description

technical field [0001] The invention relates to the field of sensor manufacturing, in particular to a graphene oxide quantum dot humidity sensor with the characteristics of ultra-fast response, high humidity erosion resistance, and electromagnetic interference resistance and a preparation method thereof. Background technique [0002] Fields such as UAV meteorological detection, sounding balloons, and gas drilling formation water monitoring often have higher application requirements for humidity sensors. Humidity sensors in these fields must not only have ultra-fast response speed High humidity erosion performance and good anti-electromagnetic interference characteristics are also required, so it is of great significance to develop high-performance humidity sensors. [0003] In 2015, in the document Subsecond Response of Humidity Sensor Based on GrapheneOxide Quantum Dots, a resistive humidity sensor based on graphene oxide quantum dots was proposed. Coated on the electrode ...

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Problems solved by technology

[0003] In 2015, in the document Subsecond Response of Humidity Sensor Based on GrapheneOxide Quantum Dots, a resistive humidity sensor based on graphene oxide quantum dots was proposed. Coated on the electrode area, this humidity sensor uses graphene oxide quantum dots as the humidity sensitive material. Graphene oxide quantum dots have a very large specific surface area and abundant hydrophilic groups. The sensor can achieve a sub-second response speed. However, the film-forming method of spin coating results in a thicker humidity-sensitive film and poor adhesion between the film and the substrate. Therefore, it is difficult to further improve the response speed of this sensor, and it is easily corroded by external water vapor, which affects the performance of the sensor.

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