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Preparation method and application of small-size bismuth oxychloride/bismuth oxybromide chip

A technology of bismuth oxychloride and bismuth oxybromide, applied in chemical instruments and methods, separation methods, chemical/physical processes, etc., to achieve the effects of simple process flow, low cost, and improved absorption spectrum range

Inactive Publication Date: 2016-10-26
燕园众欣纳米科技(北京)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The direct synthesis of bismuth oxychloride (BiOCl) and bismuth oxybromide (BiOBr) composite photocatalytic materials on the substrate has not been reported

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The preparation method of the micron-scale bismuth oxychloride / bismuth oxybromide wafer of the present embodiment comprises the following steps:

[0029] 1) Add 1mmol BiCl3 and BiBr3 into 16ml of deionized water at room temperature, and fully stir, so that the bismuth ions are hydrolyzed with the participation of chloride ions and bromide ions to form bismuth oxychloride / bismuth oxybromide crystal nuclei;

[0030] 2) Add 0.04g of polyvinylidene fluoride PVDF into 16ml of the hydrolyzed bismuth oxychloride / bismuth oxybromide nuclei solution, stir well, and then transfer to a 20ml Teflon liner in an autoclave; Al2O3 millimeter scale wafer

[0031] 3) After sealing the autoclave, heat the sealed container at a constant temperature for 24 hours at 220° C. to form bismuth oxychloride / bismuth oxybromide wafers;

[0032] 4) Stop heating after the crystallization ends, and cool to room temperature;

[0033] 5) Collect bismuth oxychloride / bismuth oxybromide wafers in a sealed ...

Embodiment 2

[0036] The preparation method of nanoscale bismuth oxychloride / bismuth oxybromide wafer of the present invention comprises the following steps:

[0037] 1) Add 1mmol BiCl3 and BiBr3 into 16ml distilled water at room temperature, and stir fully to hydrolyze the bismuth ions with the participation of chloride ions and bromide ions to form bismuth oxychloride / bismuth oxybromide crystal nuclei, which are transferred to the autoclave. 20ml Teflon liner;

[0038] 2) After sealing the autoclave, heat the sealed container at a constant temperature for 3 hours at 120° C. to form bismuth oxychloride wafers;

[0039] 3) Stop heating after the crystallization ends, and cool to room temperature;

[0040] 4) Collect bismuth oxychloride / bismuth oxybromide wafers in a sealed container, centrifuge at a speed of 10,000 rpm for 5 minutes, pour off the supernatant, add ethanol, and ultrasonically oscillate for 5 minutes, then replace the addition of ethanol with water Repeat the above steps twi...

Embodiment 3

[0043] The preparation method of nanoscale bismuth oxychloride wafer of the present invention, comprises the following steps:

[0044] 1) Add 1mmol BiCl3 and BiBr3 to 20ml of distilled water at room temperature, then add 0.1ml of concentrated hydrochloric acid with a concentration of 36% to 38%. At this time, the measured pH = 1.3, and fully stir to make the bismuth ions in the chlorine ion, bromine Under the participation of ions, it is hydrolyzed to form bismuth oxychloride / bismuth oxybromide crystal nucleus, which is transferred to the 25ml Teflon liner of the autoclave;

[0045] 2) After sealing the autoclave, heat the sealed container at a constant temperature for 3 hours at 120° C. to form bismuth oxychloride / bismuth oxybromide wafers;

[0046]3) Stop heating after the crystallization ends, and cool to room temperature;

[0047] 4) Collect the bismuth oxychloride / bismuth oxybromide wafer in the sealed container, and use ethanol and deionized water to clean and remove im...

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Abstract

The invention discloses a hydrothermal preparation method for a small-size bismuth oxychloride / bismuth oxybromide chip. The method comprises the following steps: hydrolyzing bismuth ions in the presence of chloride ions and bromide ions so as to form a bismuth oxychloride / bismuth oxybromide crystal nucleus; controlling heating time and temperature and a template in an enclosed container so as to form a bismuth oxychloride / bismuth oxybromide chip with a controllable size; and carrying out cooling, cleaning and drying so as to obtain a high-purity bismuth oxychloride chip having a controllable size and directly grown on a substrate. The method provided by the invention adopts the principle of direct hydrolysis of bismuth chloride, only has one reactant, is simple in process flow and low in cost, can control the size of the produced chip by changing heating time and temperature and the template, and is a preparation method with commercial utilization value. The prepared bismuth oxychloride chip is extensively applied to the fields of photocatalysts and devices thereof.

Description

technical field [0001] The invention relates to the preparation of a bismuth oxychloride / bismuth oxybromide composite wafer, in particular to a method for preparing a small-sized bismuth oxychloride / bismuth oxybromide composite wafer by using a hydrothermal method and its application. Background technique [0002] With the development of the dye industry, its production wastewater has become one of the most important sources of water pollution. Scholars at home and abroad have used various methods to remove dye molecules in water, among which photocatalytic oxidation is widely used because of its energy-saving, high-efficiency, stable properties, and thorough degradation of pollutants. Traditional TiO2 is the most widely used photocatalyst, which can efficiently degrade a variety of toxic organic compounds, but its wide band gap (about 3.2eV) makes it only respond to ultraviolet light. Band composite photocatalytic materials are a solution. The highly anisotropic layered s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/06B01D53/86B01D53/56C09D7/12
CPCB01D53/8628C09D7/70B01J27/06B01D2258/06B01D2257/404B01D2255/802B01J35/39
Inventor 张扬威孙彬田幼华
Owner 燕园众欣纳米科技(北京)有限公司
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