Method for improving selected area epitaxial growth interface
A technology of selective area epitaxy and interface, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effect of improving crystal quality and low dislocation density
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[0036] Such as Picture 8 Shown here is a schematic diagram of the selected region epitaxial structure of this embodiment. The structure includes a substrate (1), a stress buffer layer (2), a GaN buffer layer (3), a GaN insertion layer (4), and a GaN trench from bottom to top. Road layer (5), AlGaN barrier layer (6). The manufacturing method of the above-mentioned selective area epitaxial structure is as Figure 1-Figure 8 As shown, including the following steps:
[0037] 1) Provide a substrate (1); such as figure 1 Shown.
[0038] 2) Growing a stress buffer layer (2) on the substrate (1); such as figure 2 Shown.
[0039] 3) Grow a GaN buffer layer (3) on the stress buffer layer; image 3 Shown.
[0040] 4) Deposit a layer of SiO2 on the GaN buffer layer (3) as a mask layer (7);. Such as Figure 4 Shown.
[0041] 5) Use photolithography and development technology and wet etching to remove the dielectric layer in the area where the epitaxial AlGaN is needed to realize the patterning...
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