Inorganic transparent polymerized anti-leakage waterproof nano adhesive
A technology of anti-seepage, waterproof and nano-adhesive, which is applied in the field of materials, can solve the problems of environmental protection, toxicity, acid and alkali resistance, frost resistance, ultraviolet resistance, rust resistance, pollution resistance and self-cleaning, etc., to achieve shortening The construction period and the effect of improving construction efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0017] An inorganic transparent polymeric anti-seepage and waterproof adhesive, the main raw materials in parts by weight are: 30 parts of nano-silicon dioxide, 5 parts of carbon nanotubes, 15 parts of LDW302A, 5 parts of polyacrylamide, 15 parts of methanol, and 0.5 parts of ammonium chloride part, 0.1 part of pentaerythritol; the preparation method of the nano-silicon dioxide: first cut the silicon dioxide film into 1cm×1cm fragments, then implant ions into the fragments, use argon as the working gas, and the vacuum degree of the sputtering chamber 2.0×10 -4 Pa, the discharge voltage is 65V, the beam voltage is 1500V, and the growth beam current is 8mA. After sputtering, silicon dioxide clusters are obtained, and then deionized water is added and ultrasonic treatment is performed. The ultrasonic power is 3000W, the temperature is 800°C, and the time for 15 minutes, after the ultrasonic wave is over, silicon dioxide nanoparticles are obtained, then a titanate coupling agent i...
Embodiment 2
[0021] An inorganic transparent polymeric anti-seepage and waterproof adhesive, the main raw materials in parts by weight are: 33 parts of nano-silica, 6 parts of carbon nanotubes, 18 parts of LDW302A, 5 parts of polyacrylamide, 20 parts of methanol, 0.5 parts of ammonium chloride part, 0.1 part of pentaerythritol; the preparation method of the nano-silicon dioxide: first cut the silicon dioxide film into 1cm×1cm fragments, then implant ions into the fragments, use argon as the working gas, and the vacuum degree of the sputtering chamber 2.0×10 -4 Pa, the discharge voltage is 65V, the beam voltage is 1500V, and the growth beam current is 8mA. After sputtering, silicon dioxide clusters are obtained, and then deionized water is added and ultrasonic treatment is performed. The ultrasonic power is 3000W, the temperature is 800°C, and the time for 15 minutes, after the ultrasonic wave is over, silicon dioxide nanoparticles are obtained, then a titanate coupling agent is added for s...
Embodiment 3
[0025] An inorganic transparent polymeric anti-seepage and waterproof adhesive, the main raw materials in parts by weight are: 35 parts of nano-silica, 8 parts of carbon nanotubes, 21 parts of LDW302A, 8 parts of polyacrylamide, 23 parts of methanol, and 0.8 parts of ammonium chloride part, 0.4 part of pentaerythritol; the preparation method of the nano-silicon dioxide: first cut the silicon dioxide film into 1cm×1cm fragments, then implant ions into the fragments, use argon as the working gas, and the vacuum degree of the sputtering chamber 2.0×10 -4 Pa, the discharge voltage is 65V, the beam voltage is 1500V, and the growth beam current is 8mA. After sputtering, silicon dioxide clusters are obtained, and then deionized water is added and ultrasonic treatment is performed. The ultrasonic power is 3000W, the temperature is 900°C, and the time It was 57min, after the ultrasonic was finished, silicon dioxide nanoparticles were obtained, then a titanate coupling agent was added t...
PUM
Property | Measurement | Unit |
---|---|---|
diameter | aaaaa | aaaaa |
diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com