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Method for selectable single-side growth of graphene on SiC substrate

A graphene and selective technology, applied in the field of microelectronic materials, to reduce the cost of use, suppress double-sided graphene, and improve the surface morphology

Active Publication Date: 2016-09-21
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Aiming at the technical problem of simultaneous formation of graphene on the C-side and Si-side of the SiC substrate under the existing SiC substrate epitaxy process conditions, the present invention provides a method for selectively performing single-side graphene on a large-diameter SiC substrate in a graphite crucible Methods of growing graphene

Method used

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  • Method for selectable single-side growth of graphene on SiC substrate
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  • Method for selectable single-side growth of graphene on SiC substrate

Examples

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Embodiment 1

[0055] A method for selective single-sided growth based on SiC epitaxial graphene, comprising the steps of:

[0056] (1) Grind and polish the 2-inch diameter 4H-SiC substrate wafer on both sides, so that the surface roughness is less than 0.5nm, and the flatness is less than 6μm, and a 4H-SiC substrate with a thickness of 400μm is obtained. Standard cleaning of the surface is then carried out.

[0057] (2) Grinding and polishing the Si surface of the 2-inch diameter 4H-SiC cover sheet, so that the surface roughness is less than 3nm, and the flatness is less than 15 μm, and a 4H-SiC wafer with a thickness of 500 μm is obtained. Standard cleaning of the surface is then carried out.

[0058] (3) Place a 2-inch graphite crucible in a vertical heating growth furnace, place the 4H-SiC substrate Si prepared in the above step (1) face down on the center of the graphite crucible, and then place the Si surface prepared in the above step (2) The Si surface of the 4H-SiC wafer is superi...

Embodiment 2

[0063] A kind of method based on the optional single-sided growth of SiC epitaxial graphene, according to the graphene growth method identical with embodiment 1, its difference is, the 2 inches 4H-SiC substrate C that has processed is faced The bottom is placed flat in the growth furnace crucible, and the growth temperature is controlled at 1550 °C. Raman spectroscopy and atomic force microscopy were used to characterize the obtained graphene material, the shape of graphene is uniform; the Hall mobility is 3500cm 2 / v·s.

Embodiment 3

[0065] A kind of method based on SiC epitaxial graphene alternative single-sided growth method, according to the graphene growth method identical with embodiment 1, its difference is, the 3 inch 4H-SiC substrate Si that has processed is faced The bottom is placed in the crucible of the growth furnace, and the polished Ta sheet is used to overlay the substrate. Test and characterize the grown graphene, the number of layers is a single layer; the Hall mobility is 1500cm 2 / v·s.

[0066] Through the description of Examples 1-3, combined with the characterization results of the graphene materials in the examples, it can be seen that the inventive method can effectively suppress the formation of graphene on the non-selective growth surface, and eliminate the test deviation produced by the double-sided graphene on the substrate ; The quality, uniformity and mobility of the grown graphene are all improved, which will be beneficial to the application of SiC substrate epitaxial graphe...

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Abstract

The invention relates to a method for selectable single-side growth of graphene on a SiC substrate. The method comprises the following steps: horizontally placing the SiC substrate in a graphite crucible, allowing the side of C to be downward or the side of Si to be downward, and overlaying a cover sheet on the upward side of the SiC substrate, wherein the cover sheet is a Si atom donor or a C atom absorber; vacuumizing the chamber of a heating furnace for heating, then introducing high-purity H2, and subjecting the surface of the SiC substrate to hydrogen etching so as to form a regular SiC step structure; and closing H2, introducing Ar gas, continuing heating the heating furnace to 1500 to 1800 DEG C, and maintaining the temperature so as to complete the growth of graphene. The graphene grown by using the method provided by the invention has greatly-improved quality and surface morphology, and can be extensively applied in the fields of logic circuits, laser Q modulation, high-frequency nanometer radio frequency devices, etc.

Description

technical field [0001] The invention relates to a method for selective single-sided growth based on SiC epitaxial graphene, which belongs to the technical field of microelectronic materials. Background technique [0002] Graphene is a shining star in the family of carbon materials. Since it was separated and prepared by Professor Geim and Professor Novoselov in 2004, it has led a research boom for more than ten years. Graphene is made of sp 2 An ideal two-dimensional crystal at the single-atom level formed by a network of hybridized carbon atoms has unparalleled properties. Graphene has ultra-high intrinsic mobility, about 200,000 cm 2 / (v s), which is two orders of magnitude higher than the electron mobility of typical silicon field effect transistors; there is also the highest thermal conductivity [about 5000W / (m K)] among known materials, huge specific surface area (2630m 2 / g), great Young's modulus (1.06TPa) and fracture stress (about 130GPa); in addition, it also h...

Claims

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Application Information

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IPC IPC(8): C30B25/18C30B29/02C23C16/26
CPCC23C16/26C30B25/18C30B29/02
Inventor 徐现刚陈秀芳张福生赵显
Owner SHANDONG UNIV
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