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Modified polysilazane, coating solution containing said modified polysilazane, and gas barrier film produced using said coating solution

A technology of polysilazane and gas barrier, which is applied in semiconductor/solid-state device manufacturing, coating, electrical components, etc., and can solve problems such as inability to apply flexible substrates

Inactive Publication Date: 2016-09-14
KONICA MINOLTA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the formation of a dense silicon oxynitride film or silicon oxide film by thermal modification or wet heat modification of polysilazane requires a high temperature of 450°C or higher, and it cannot be applied to flexible substrates such as plastics.

Method used

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  • Modified polysilazane, coating solution containing said modified polysilazane, and gas barrier film produced using said coating solution
  • Modified polysilazane, coating solution containing said modified polysilazane, and gas barrier film produced using said coating solution
  • Modified polysilazane, coating solution containing said modified polysilazane, and gas barrier film produced using said coating solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0349] (Example 1: Production of gas barrier film 104)

[0350] In Comparative Example 1, instead of the coating solution (1), ALCH (manufactured by Kawaken Fine Chemicals Co., Ltd., ethyl acetoacetate diisopropoxyaluminum) was used in a ratio of Si to perhydropolysilazane. Coating solution (4) was prepared by adding an amount so that the number of elements became 10 mol% to coating solution (1), stirred and reacted at 80°C for 1 hour, and then cooled, and produced gas in the same manner as in Comparative Example 1. Barrier film 104 . It should be noted that the above reaction is carried out in an atmosphere having a water vapor concentration and an oxygen concentration of 10 volume ppm or less, respectively. In addition, the adoption of the modified polysilazane in the coating solution (4) prepared above was measured in the same manner as in Comparative Example 1. 29 SiH determined by Si-NMR 3 with SiH and SiH 2 The total ratio of [(SiH 3 ):(SiH+SiH 2 )], and the result...

Embodiment 2

[0351] (Example 2: Production of gas barrier film 105)

[0352] In Comparative Example 1, instead of the coating solution (1), AMD (manufactured by Kawaken Fine Chemicals Co., Ltd., diisopropoxymono-sec-butoxyaluminum) was used in combination with perhydropolysilazane. Coating solution (5) prepared in the same manner as in Comparative Example 1 except that the amount of Si element number to be 10 mol% was further added to coating solution (1), stirred and reacted at 80° C. for 1 hour, and then cooled. Gas barrier film 105 . It should be noted that the above reaction is carried out in an atmosphere having a water vapor concentration and an oxygen concentration of 10 volume ppm or less, respectively. In addition, the adoption of the modified polysilazane in the coating solution (5) prepared above was measured in the same manner as in Comparative Example 1. 29 SiH determined by Si-NMR 3 with SiH and SiH 2 The total ratio of [(SiH 3 ):(SiH+SiH 2 )], and the results are shown...

Embodiment 3

[0353] (Example 3: Production of gas barrier film 106)

[0354] In Comparative Example 1, instead of the coating solution (1), aluminum chelate D (manufactured by Kawaken Fine Chemicals Co., Ltd., aluminum bis(ethyl acetoacetate)monoacetylacetonate) was used with respect to perhydropolymer Coating solution (6) prepared by adding silazane to coating solution (1) in an amount such that the Si element number of silazane was 10 mol%, stirred and reacted at 80° C. for 1 hour, and then cooled. 1 The gas barrier film 106 was produced in the same manner. It should be noted that the above reaction is carried out in an atmosphere having a water vapor concentration and an oxygen concentration of 10 volume ppm or less, respectively. In addition, the adoption of the modified polysilazane in the coating solution (6) prepared above was measured in the same manner as in Comparative Example 1. 29 SiH determined by Si-NMR 3 with SiH and SiH 2 The total ratio of [(SiH 3 ):(SiH+SiH 2 )], an...

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Abstract

The present invention relates to modified polysilazane, a coating solution containing said modified polysilazane, and a gas barrier film produced using said coating solution. The present invention provides a method for producing a gas barrier film having exceptional storage stability, especially storage stability under rigorous conditions (high-temperature, high-humidity conditions). This modified polysilazane has a ratio ((SiH3:(SiH+SiH2)) of SiH3 and the total of SiH and SiH2 of 1:10-30 as measured by 29Si-NMR.

Description

technical field [0001] The present invention relates to a modified polysilazane, a coating solution containing the modified polysilazane, and a gas barrier film produced using the coating solution. More specifically, the present invention relates to a modified polysilazane used in electronic devices such as organic electroluminescence (EL) elements, solar cell elements, and liquid crystal displays, a coating liquid containing the modified polysilazane, and A gas barrier film manufactured using this coating solution. Background technique [0002] Conventionally, gas barrier films formed by laminating multiple layers of thin films containing metal oxides such as aluminum oxide, magnesium oxide, and silicon oxide on the surface of a plastic substrate or film require water vapor, oxygen, etc. It is widely used in the packaging of various gas-blocking articles, such as packaging for preventing deterioration of food, industrial supplies, and pharmaceuticals. [0003] In addition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/082B32B9/00C08G77/62C09D183/16H01L51/50H05B33/02H05B33/04
CPCC08G77/62C09D183/16H10K50/844
Inventor 伊东宏明
Owner KONICA MINOLTA INC
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