A high-yield flip-chip linear power amplifier with balanced heat dissipation and its application

Abstract

The invention discloses a high-yield flip-chip linear power amplifier with balanced heat radiation and application thereof. The high-yield flip-chip linear power amplifier with balanced heat radiation is characterized in that NM unit amplification units in parallel connection of the Mth cascaded amplification circuit in an output stage of a power amplifier are set to be two symmetrically arranged arrays and are respectively arranged at the two sides of a group of ground wires GND; each unit amplification unit in each array respectively adopts a flip-chip technology and is connected with a corresponding ground wire GND flip node in the group of the ground wires GND through an emitting electrode or a grid electrode of a transistor of the unit amplification unit; and each unit amplification unit in each array respectively adopts the flip-chip technology and is connected with a corresponding power line VCC flip node in a group of power lines VCC through a collector electrode or a drain electrode of the transistor of the unit amplification unit. The high-yield flip-chip linear power amplifier with balanced heat radiation can improve the density of the grounding nodes of the power amplifier by using the flip-chip nodes of a unified size, thereby achieving the goals of high yield and high reliability.

Description

technical field [0001] The invention relates to a radio frequency power amplifier, in particular to a power amplifier with high efficiency, high yield and high reliability, which adopts flip-chip technology and can balance heat dissipation and its application. Background technique [0002] The radio frequency transmitting front-end module is a key component for radio frequency terminal devices to realize signal transmission. Currently, with the rapid growth of global wireless communication users and users' higher-end experience requirements for wireless communication, the market demand for wireless communication bandwidth is growing rapidly. In order to solve this market demand, more and more dedicated wireless communication frequency bands have been opened up around the world and are becoming more and more crowded. Modulation and demodulation methods with high frequency band utilization, such as: 3G Wideband Code Division Multiple Access (WCDMA), Band Code Division Multipl...

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Problems solved by technology

However, this method of through-wafer grounding is not effective in heat dissipation, because the emitter of commercial HBT transistors is mostly on the top layer of the multilayer material of the transistor, and the current passing through the emitter of the transistor needs to flow through the multilayer material under the emitter of the transistor, including the base. Level layer, collector layer, substrate layer, and then grounded through the metal plating layer on the back of the wafer, such a long path will cause excessive inductance and resistance, resulting in poor heat conduction efficiency, which makes it difficult to achieve the linearity and efficiency of the power amplifier optimization

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