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Silicon single-crystal pulling equipment and growing method

A silicon single crystal and equipment technology, applied in the field of Cz method silicon single crystal pulling equipment, can solve problems such as accelerating the melting of polycrystalline silicon raw materials

Active Publication Date: 2016-08-24
SHANGHAI ADVANCED SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These patents all reduce heat loss by reducing the heat radiation of the crucible and the raw materials in the crucible, and have limited effect on accelerating the melting of polysilicon raw materials.

Method used

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  • Silicon single-crystal pulling equipment and growing method
  • Silicon single-crystal pulling equipment and growing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The CZ method is used to grow 8-inch direction integrated circuit-grade single crystal silicon silicon single crystal, the amount of raw materials added is 100 kg, and the diameter of the quartz crucible used is 22 inches.

[0030] Below the crucible tray is a heat shield mounted on a graphite support. The length of the auxiliary heat shield is 300mm, the outer diameter of the auxiliary heat shield is 476mm, and the inner diameter of the auxiliary heat shield is 406mm. The outer layer of the auxiliary heat shield is made of graphite material with a thickness of 20mm and a thermal conductivity of 2.8W / m / K. The inner layer of the auxiliary heat shield is made of graphite material with a thickness of 15mm and a thermal conductivity of 107W / m / K.

[0031] There is a bottom heater inside the auxiliary heat shield and directly below the graphite crucible. In the raw material melting process, the height of the bottom heater from the bottom of the graphite support plate is 20...

Embodiment 2

[0034]As in Example 1, only in the raw material melting process, the input power of the heater at the bottom is controlled to be 35 kW, and the polysilicon raw material melting takes 4.5 hours. After the raw material is melted, turn off the heater at the bottom and start pulling and growing the silicon single crystal. During the equal-diameter growth process of silicon single crystal, the average growth rate is controlled at 1.2mm / min.

Embodiment 3

[0036] Same as Example 1, only in the raw material melting process, the input power of the heater at the bottom is controlled to be 25 kW, and the polysilicon melting takes 5 hours. After the raw material is melted, the bottom heater is turned off, the water-cooled electrode continues to cool the bottom heater, and the silicon single crystal is pulled and grown. When the mass of the solution in the quartz crucible is less than 40 kg, an input power of 25 kW is applied to the bottom heater to heat the bottom of the crucible. During the equal-diameter growth process of silicon single crystal, the average growth rate is controlled at 1.2mm / min.

[0037] The silicon single crystal cutting and sampling test results show that the radial resistivity fluctuation range at the end of the equal-diameter section of the silicon single crystal is improved compared with Example 1, which is conducive to improving the local uniformity of the resistivity of a single silicon wafer.

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Abstract

The invention provides silicon single-crystal pulling equipment. An auxiliary heat shield is arranged under a crucible tray support. A bottom heater is arranged in the auxiliary heat shield and supported and cooled through a water-cooling electrode. The bottom heater is made of a graphite material. The auxiliary heat shield is of an inverted-U-shaped structure. The horizontal part of the upper part of the auxiliary heat shield only comprises single-layer graphite. The vertical parts of the two sides of the auxiliary heat shield comprise double-layer graphite. The double-layer graphite is formed in the mode that a layer of outer layer graphite is added on the basis of single-layer graphite on the inner layer. The heat conductivity of the outer layer graphite is not smaller than 0.1 W / m / k and not larger than 20 W / m / K, and the heat conductivity of the inner layer graphite material is not smaller than 75 W / m / K and not larger than 200 W / m / K. The invention further provides a method for carrying out silicon single-crystal growing through the silicon single-crystal pulling equipment. By means of the equipment, melting time for polycrystalline silicon raw materials can be shortened greatly, the silicon single-crystal pulling growth rate is increased, the growth cycle of silicon single crystals is shortened, the cost is saved, and the production efficiency is improved.

Description

technical field [0001] The invention relates to a Cz-method silicon single crystal pulling equipment, in particular to a Cz-method silicon single-crystal pulling growth furnace containing a bottom heater and an auxiliary heat shield, and the invention also relates to a Cz-method silicon single crystal growth method. Background technique [0002] In order to obtain high production efficiency of growing silicon single crystal by pulling method, reducing the melting time of raw materials and pulling time of silicon single crystal is a direct means and an urgent need for technicians. In order to accelerate the melting of polysilicon raw materials, it is necessary for the equipment to have a good thermal insulation structure and heating design; on the other hand, in order to speed up the pulling speed, it is required to have a high heat dissipation effect in the high temperature area. [0003] In order to improve the pulling rate of silicon single crystal, many patents (such as J...

Claims

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Application Information

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IPC IPC(8): C30B15/14C30B29/06C30B15/20
CPCC30B15/14C30B15/203C30B29/06
Inventor 李秦霖刘浦锋宋洪伟陈猛
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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