Ga2o3/(Ga1-xFex)2o3 film with room temperature ferromagnetism and high ultraviolet light permeation function and the manufacturing method thereof

A room temperature ferromagnetism and ultraviolet light technology, which is applied in the manufacture/processing of electromagnetic devices, material selection, etc., to achieve the effect of simple and common equipment, which is conducive to popularization

Active Publication Date: 2016-08-10
北京镓创科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is not difficult to find that so far, experimentally using high-energy photons to control electron spin has hardly been reported.

Method used

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  • Ga2o3/(Ga1-xFex)2o3 film with room temperature ferromagnetism and high ultraviolet light permeation function and the manufacturing method thereof
  • Ga2o3/(Ga1-xFex)2o3 film with room temperature ferromagnetism and high ultraviolet light permeation function and the manufacturing method thereof
  • Ga2o3/(Ga1-xFex)2o3 film with room temperature ferromagnetism and high ultraviolet light permeation function and the manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Example 1 Growth of Ga 2 o 3 / Fe(50) multilayer film

[0021] The specific steps are as follows: (1) Using the c-plane sapphire as the substrate, soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Air dry, stand-by; (2) with 99.99% pure Ga 2 o 3 Ceramics and 99.99% pure metal Fe are used as targets, and Ga 2 o 3 and the Fe metal target are placed on the target platform of the laser molecular beam epitaxy system, and the sapphire substrate processed in step (1) is fixed on the sample holder and put into the vacuum chamber; (3) the chamber is evacuated, and the substrate is heated. bottom, first grow Ga on the c-plane of the sapphire substrate 2 o 3 Thin film, then rotate the orbiting target to the metal Fe target, deposit Fe thin film, switch the target by continuously rotating the orbiting target, and continue to alternately and repeatedly deposit Ga ...

Embodiment 2

[0024] Example 2 Growth of Ga 2 o 3 / Fe(20) multilayer film

[0025] Steps (1) and (2) are all the same as in Example 1. The number of laser pulses for depositing the Fe thin film in step (3) is 20 times. The test results are all similar to Example 1.

Embodiment 3

[0026] Example 3 Growth of Ga 2 o 3 / Fe(0) film

[0027] Steps (1) and (2) are all the same as in Example 1. Deposit Ga in step (3) 2 o 3 The number of laser pulses for the thin film was 2000 times. Among them, the working air pressure is 1×10 -6 Pa, substrate temperature 900°C, target base distance 5cm, laser energy 5J / cm 2 , the laser frequency is 1 Hz; after the growth is completed, anneal in situ at 900 ° C for 30 minutes to obtain Ga 2 o 3 / Fe(0) multilayer films.

[0028] Figure 5 Ga 2 o 3 X-ray diffraction patterns (N=0, 10, 20, 30, 40, 50, 100) of Fe(N) multilayer films, it can be seen from the figure that, except for the sample Ga 2 o 3 / Fe(100), only found crystal plane family, indicating that all samples are β-phase Ga preferentially grown along the (201) crystal plane 2 o 3 film. From Figure 5 As can be seen from the enlarged figure of (b), Ga 2 o 3 / Fe(10), Ga 2 o 3 / Fe(20), Ga 2 o 3 / Fe(30), Ga 2 o 3 / Fe(40), Ga 2 o 3 Corresponding ...

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Abstract

The invention discloses a Ga2o3 / (Ga1-xFex)2o3 film with room temperature ferromagnetism and high ultraviolet light permeation function and the manufacturing method thereof. The film is provided with room temperature ferromagnetism, a high penetration rate in deep ultraviolet zones and the ability for high energy photons to penetrate. The film can be used in researches on the mutual effect of high energy photon spinning and electron spinning. The manufacturing method for the film is performed as follows: using a c face sapphire as a substrate; conducting cycle deposition for a plurality of times to a Ga2o3 thin layer and a transitional metal Fe thin layer through a laser molecular beam epitaxial technology, and achieving a multi-layer film of Ga2o3 / (Ga1-xFex)2o3 doped with transitional metal elements through the heat diffusion among the layers. The manufacturing method for the multi-layer film enables a Ga2o3 / (Ga1-xFex)2o3 film to be doped by different amounts of Fe by adjusting the times for laser pulse of a Fe deposition layer. The entire process is done in the same cavity so the purity of a sample is guaranteed. Further, since the equipment is commonplace, it can be conveniently promoted for wide use. The Ga2o3 / (Ga1-xFex)2o3 film manufactured by the invention is a diluted magnetic semiconductor material with great prospects for future use.

Description

technical field [0001] The invention belongs to the technical field of dilute magnetic semiconductor thin films, in particular to a Ga 2 o 3 / (Ga 1-x Fe x ) 2 o 3 Thin films and methods for their preparation. technical background [0002] Spintronics based on semiconductors is considered to be the mainstream direction of future development, and one of the important ways is to construct a new type of material - dilute magnetic semiconductor. People dope and introduce magnetic ions such as transition metals (or rare earth metals) into semiconductors, and through the spin exchange between magnetic ions and electrons in the semiconductor conduction band and the spin exchange between transition metal ions, this type of material has Magnetic, this kind of material that generates magnetism by partially replacing non-magnetic ions is a dilute magnetic semiconductor. Diluted magnetic semiconductor materials utilize the charge properties and spin properties of electrons at the ...

Claims

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Application Information

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IPC IPC(8): H01L43/10H01L43/12
CPCH10N50/85H10N50/01
Inventor 郭道友闫汇王顺利李培刚唐为华沈静琴
Owner 北京镓创科技有限公司
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